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IS62C1024-55W

Description
Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
Categorystorage    storage   
File Size65KB,8 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS62C1024-55W Overview

Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32

IS62C1024-55W Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeDIP
package instruction0.600 INCH, PLASTIC, DIP-32
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T32
JESD-609 codee0
length41.91 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height4.572 mm
Maximum standby current0.03 A
Minimum standby current4.5 V
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm
IS62C1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 35, 45, 55, 70 ns
Low active power: 450 mW (typical)
Low standby power: 500
µW
(typical) CMOS
standby
• Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
IS62C1024
ISSI
ISSI
®
®
JULY 1996
DESCRIPTION
The
ISSI
IS62C1024 is a low power,131,072-word by 8-bit
CMOS static RAM. It is fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS62C1024 is available in 32-pin 600-mil plastic DIP, 525-
mil plastic SOP and TSOP (type 1) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 X 2048
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1996, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
Rev. F 0796
SR81995C024
1

IS62C1024-55W Related Products

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Description Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 128KX8, 70ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 128KX8, 35ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 128KX8, 35ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 128KX8, 45ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 128KX8, 45ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Parts packaging code DIP DIP DIP DIP DIP DIP DIP
package instruction 0.600 INCH, PLASTIC, DIP-32 0.600 INCH, PLASTIC, DIP-32 0.600 INCH, PLASTIC, DIP-32 0.600 INCH, PLASTIC, DIP-32 0.600 INCH, PLASTIC, DIP-32 0.600 INCH, PLASTIC, DIP-32 0.600 INCH, PLASTIC, DIP-32
Contacts 32 32 32 32 32 32 32
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 55 ns 70 ns 35 ns 35 ns 45 ns 45 ns 55 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDIP-T32 R-PDIP-T32 R-PDIP-T32 R-PDIP-T32 R-PDIP-T32 R-PDIP-T32 R-PDIP-T32
JESD-609 code e0 e0 e0 e0 e0 e0 e0
length 41.91 mm 41.91 mm 41.91 mm 41.91 mm 41.91 mm 41.91 mm 41.91 mm
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32 32
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 70 °C 85 °C 85 °C 70 °C 85 °C
Minimum operating temperature - -40 °C - -40 °C -40 °C - -40 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Exportable YES YES YES YES YES YES YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 4.572 mm 4.572 mm 4.572 mm 4.572 mm 4.572 mm 4.572 mm 4.572 mm
Maximum standby current 0.03 A 0.04 A 0.03 A 0.04 A 0.04 A 0.03 A 0.04 A
Minimum standby current 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Maximum slew rate 0.12 mA 0.1 mA 0.15 mA 0.16 mA 0.145 mA 0.135 mA 0.13 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 15.24 mm 15.24 mm 15.24 mm 15.24 mm 15.24 mm 15.24 mm 15.24 mm
Is Samacsys - N N N N N N
Base Number Matches - 1 1 1 1 1 1
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