Freescale Semiconductor
Technical Data
Document Number: MD7IC21100N
Rev. 2, 2/2012
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC21100N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110 to 2170 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD--SCDMA.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ1A
+
I
DQ1B
= 190 mA, I
DQ2A
+ I
DQ2B
= 925 mA, P
out
= 32 Watts Avg.,
f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 30%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, P
out
= 110 Watts CW
(3 dB Input Overdrive from Rated P
out
)
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 100 Watts CW
P
out
.
•
Typical P
out
@ 1 dB Compression Point
≃
110 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S-Parameters
•
On--Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
•
Internally Matched for Ease of Use
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MD7IC21100NR1
MD7IC21100GNR1
MD7IC21100NBR1
2110-
-2170 MHz, 32 W AVG., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618-
-02
TO-
-270 WB-
-14
PLASTIC
MD7IC21100NR1
CASE 1621-
-02
TO-
-270 WB-
-14 GULL
PLASTIC
MD7IC21100GNR1
CASE 1617-
-02
TO-
-272 WB-
-14
PLASTIC
MD7IC21100NBR1
V
DS1A
RF
inA
V
GS1A
V
GS2A
V
GS1B
V
GS2B
RF
inB
V
DS1B
RF
out1
/V
DS2A
Quiescent Current
Temperature Compensation
(1)
Quiescent Current
Temperature Compensation
(1)
RF
out2
/V
DS2B
V
DS1A
V
GS2A
V
GS1A
NC
RF
inA
NC
NC
RF
inB
NC
V
GS1B
V
GS2B
V
DS1B
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out1
/V
DS2A
13
RF
out2
/V
DS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2008, 2011--2012. All rights reserved.
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
--0.5, +65
--0.5, +6.0
32, +0
--65 to +150
150
225
29
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 76°C, 32 W CW)
(Case Temperature 76°C, 32 W CW)
Stage 1, 28 Vdc, I
DQ1A
+ I
DQ1B
= 190 mA
Stage 2, 28 Vdc, I
DQ2A
+ I
DQ2B
= 925 mA
Symbol
R
θJC
2.7
0.7
Value
(2,3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
0
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
(4)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 50
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1A
+ I
DQ1B
= 190 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1A
+ I
DQ1B
= 190 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1
—
5.5
2
2.9
6.3
3
—
7
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 270
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2A
+ I
DQ2B
= 925 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2A
+ I
DQ2B
= 925 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Stage 2 — Dynamic Characteristics
(1,2)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
380
—
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1
—
5.3
0.1
2
2.8
5.9
0.3
3
—
6.8
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
+ I
DQ1B
= 190 mA, I
DQ2A
+
I
DQ2B
= 925 mA, P
out
= 32 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
PAR
ACPR
IRL
27
27
5.6
—
—
28.5
30
6.1
--38
--15
32
—
—
--36
--9
dB
%
dB
dBc
dB
Typical Performances
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
+ I
DQ1B
= 190 mA, I
DQ2A
+ I
DQ2B
= 925 mA,
2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 112 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 32 W Avg.
Quiescent Current Accuracy over Temperature
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C)
(4)
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 110 W CW
Average Group Delay @ P
out
= 110 W CW, f = 2140 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 110 W CW,
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature (--30°C to +85°C)
Output Power Variation over Temperature (--30°C to +85°C)
1.
2.
3.
4.
P1dB
IMD
sym
—
—
—
—
—
—
—
—
—
—
110
50
50
0.3
±3
0.6
2.6
35
0.042
0.003
—
—
—
—
—
—
—
—
—
—
MHz
dB
%
°
ns
°
dB/°C
dB/°C
W
MHz
VBW
res
G
F
∆I
QT
Φ
Delay
∆Φ
∆G
∆P1dB
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a single--ended configuration.
Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
RF Device Data
Freescale Semiconductor, Inc.
3
C1
V
DD1
R6
C7
1
2
3
4 NC
5
DUT
Quiescent Current
Temperature Compensation
14
Z3
Z4
Z5
Z6
Z8
V
DD2
V
GG2
V
GG1
RF
INPUT
R1
R2
C9
C16
C18
C3
C4
Z1
Z2
6 NC
7 NC
8
9 NC
10
11
12
13
Quiescent Current
Temperature Compensation
Z7
C11
RF
OUTPUT
V
GG1
V
GG2
V
DD1
R3
R4
C14
Z9
C12
C13
C15
R5
C8
C2
Z1
Z2
Z3
Z4
Z5
0.066″ x 2.193″ Microstrip
0.141″ x 0.126″ Microstrip
0.628″ x 0.045″ Microstrip
0.628″ x 0.340″ Microstrip
0.066″ x 0.581″ Microstrip
Z6
Z7
Z8, Z9
PCB
C10
C17
C19
C5
C6
0.066″ x 0.821″ Microstrip
0.066″ x 0.533″ Microstrip
0.080″ x 0.902″ Microstrip
Rogers RO4350B, 0.030″,
ε
r
= 3.5
Figure 3. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C5, C6
C7, C8, C9, C10
C11
C12, C13, C14
C15
C16, C17
C18, C19
R1, R2, R3, R4
R5, R6
Description
10
μF,
50 V Chip Capacitors
5.1 pF Chip Capacitors
10 pF Chip Capacitor
1.2 pF Chip Capacitors
0.5 pF Chip Capacitor
0.1
μF,
100 V Chip Capacitors
1
μF,
100 V Chip Capacitors
4.7 kΩ, 1/4 W Chip Resistors
2
Ω,1/2
W Chip Resistors
Part Number
GRM55DR61H106KA88B
ATC100B5R1CT500XT
ATC100B100JT500XT
ATC100B1R2CT500XT
ATC100B0R5CT500XT
GRM32NR72A104KA01B
GRM32EER72A105KA01L
CRCW12064701FKEA
CRCW12102R00FKEA
Manufacturer
Murata
ATC
ATC
ATC
ATC
Murata
Murata
Vishay
Vishay
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
4
RF Device Data
Freescale Semiconductor, Inc.
R6
C18
V
GG2
R1
R2
C1
V
DD1
C7
C9
C16
C4
C12
C15
CUT OUT AREA
C11
C3
V
GG1
MD7IC21100N
Rev. 2
V
GG1
R3
C8
V
GG2
R4
C2
C13
C14
C5
C17
R5
C10
C19
C6
Figure 4. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Component Layout
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
RF Device Data
Freescale Semiconductor, Inc.
5
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