PRELIMINARY DATA SHEET
512M bits DDR SDRAM
EDD5108AFBG (64M words
×
8 bits)
EDD5116AFBG (32M words
×
16 bits)
Specifications
•
Density: 512M bits
•
Organization
16M words
×
8 bits
×
4 banks (EDD5108AFBG)
8M words
×
16 bits
×
4 banks (EDD5116AFBG)
•
Package: 60-ball FBGA
Lead-free (RoHS compliant)
•
Power supply:
DDR400: VDD, VDDQ
=
2.6V
±
0.1V
DDR333: VDD, VDDQ
=
2.5V
±
0.2V
•
Data rate: 400Mbps/333Mbps (max.)
•
Four internal banks for concurrent operation
•
Interface: SSTL_2
•
Burst lengths (BL): 2, 4, 8
•
Burst type (BT):
Sequential (2, 4, 8)
Interleave (2, 4, 8)
•
/CAS Latency (CL): 2, 2.5, 3
•
Precharge: auto precharge option for each burst
access
•
Driver strength: normal/weak
•
Refresh: auto-refresh, self-refresh
•
Refresh cycles: 8192 cycles/64ms
Average refresh period: 7.8µs
•
Operating ambient temperature range
TA = 0°C to +70°C
Features
•
Double-data-rate architecture; two data transfers per
clock cycle
•
The high-speed data transfer is realized by the 2 bits
prefetch pipelined architecture
•
Bi-directional data strobe (DQS) is transmitted
/received with data for capturing data at the receiver
•
Data inputs, outputs, and DM are synchronized with
DQS
•
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
•
Differential clock inputs (CK and /CK)
•
DLL aligns DQ and DQS transitions with CK
transitions
•
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
•
Data mask (DM) for write data
EO
Document No. E0887E20 (Ver. 2.0)
Date Published November 2006 (K) Japan
Printed in Japan
URL: http://www.elpida.com
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This product became EOL in April, 2010.
Elpida
Memory, Inc. 2006
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EDD5108AFBG, EDD5116AFBG
Ordering Information
Part number
EDD5108AFBG-5B-E
EDD5108AFBG-5C-E
EDD5108AFBG-6B-E
EDD5116AFBG-5B-E
EDD5116AFBG-5C-E
EDD5116AFBG-6B-E
32M
×
16
Mask
version
F
Organization
(words
×
bits)
64M
×
8
Internal
banks
4
Data rate
Mbps (max.)
400
333
400
333
JEDEC speed bin
(CL-tRCD-tRP)
DDR400B (3-3-3)
DDR400C (3-4-4)
DDR333B (2.5-3-3)
DDR400B (3-3-3)
DDR400C (3-4-4)
DDR333B (2.5-3-3)
Package
60-ball FBGA
Part Number
E D D 51 08 A F BG - 5B - E
Environment Code
E: Lead Free
(RoHS compliant)
EO
Elpida Memory
Type
D: Monolithic Device
Product Family
D: DDR SDRAM
Density / Bank
51: 512M / 4-bank
Speed
5B: DDR400B (3-3-3)
5C: DDR400C (3-4-4)
6B: DDR333B (2.5-3-3)
Organization
08: x8
16: x16
Power Supply, Interface
A: 2.5V, SSTL_2
Speed Grade Compatibility
Speed bin
DDR400B
DDR400C
DDR333B
Preliminary Data Sheet E0887E20 (Ver. 2.0)
L
Operating Frequencies
CL2
CL2.5
133MHz
166MHz
133MHz
133MHz
166MHz
166MHz
Package
BG: FBGA (Board Type)
Die Rev.
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2
CL3
200MHz
200MHz
166MHz
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EDD5108AFBG, EDD5116AFBG
Pin Configurations
/xxx indicates active low signal.
60-ball FBGA (× 8)
1
A
VSSQ DQ7
VSS
VDD
DQ0 VDDQ
60-ball FBGA (×16)
7
8
9
A
VSSQ DQ15 VSS
VDD
DQ0 VDDQ
2
3
4
5
6
1
2
3
4
5
6
7
8
9
B
NC
VDDQ DQ6
VSSQ DQ5
VDDQ DQ4
VSSQ DQS
DM
DQ1 VSSQ
DQ2 VDDQ
DQ3 VSSQ
NC
NC
/WE
/RAS
BA1
A0
VDDQ
VDD
/CAS
NC
B
DQ14 VDDQ DQ13
DQ2 VSSQ DQ1
DQ4 VDDQ DQ3
DQ6 VSSQ DQ5
LDQS VDDQ DQ7
LDM
/WE
/RAS
BA1
A0
A2
VDD
VDD
/CAS
/CS
BA0
A10
A1
A3
NC
C
NC
NC
C
DQ12 VSSQ DQ11
D
NC
NC
D
DQ10 VDDQ DQ9
EO
E
F
NC
VREF VSS
CK
E
NC
DQ8 VSSQ UDQS
F
NC
VREF VSS
UDM
/CK
CKE
A9
A7
A5
VSS
G
H
J
G
CK
/CK
H
/CS
A12
A12
A11
A8
CKE
A9
J
BA0
A11
L
A7
A5
A2
VSS
VDD
K
L
A6
K
(AP)
A10
A1
A8
(AP)
L
A6
M
A4
M
A3
A4
(Top view)
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Pin name
CK
/CK
CKE
VREF
VDD
VSS
VDDQ
VSSQ
NC
(Top view)
Pin name
A0 to A12
BA0, BA1
DQ0 to DQ15
DQS, LDQS, UDQS
/CS
/RAS
/CAS
/WE
DM, UDM, LDM
Function
Function
Clock input
Address inputs
Bank select address
Data-input/output
Differential Clock input
Clock enable
Input and output data strobe
Chip select
Input reference voltage
Power for internal circuit
Row address strobe command
Ground for internal circuit
Power for DQ circuit
Column address strobe command
Write enable
Input mask
Ground for DQ circuit
No connection
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Preliminary Data Sheet E0887E20 (Ver. 2.0)
3
EDD5108AFBG, EDD5116AFBG
CONTENTS
Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Speed Grade Compatibility............................................................................................................................2
Pin Configurations .........................................................................................................................................3
Electrical Specifications.................................................................................................................................5
Block Diagram .............................................................................................................................................13
Pin Function.................................................................................................................................................14
Command Operation ...................................................................................................................................16
Simplified State Diagram .............................................................................................................................23
Operation of the DDR SDRAM ....................................................................................................................24
Timing Waveforms.......................................................................................................................................43
Package Drawing ........................................................................................................................................49
Recommended Soldering Conditions..........................................................................................................50
EO
Preliminary Data Sheet E0887E20 (Ver. 2.0)
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4
EDD5108AFBG, EDD5116AFBG
Electrical Specifications
•
All voltages are referenced to VSS (GND).
•
After power up, wait more than 200 µs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VT
VDD
IOS
PD
TA
Tstg
Rating
–1.0 to +3.6
–1.0 to +3.6
50
1.0
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
Note
EO
Parameter
Supply voltage
Input reference voltage
Termination voltage
Input high voltage
Input low voltage
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = 0°C to +70°C)
Symbol
Speed
min.
2.5
2.3
0
0.49
×
VDDQ
VREF – 0.04
VREF + 0.15
typ.
2.6
2.5
0
0.50
×
VDDQ
VREF
—
max.
2.7
2.7
0
0.51
×
VDDQ
VREF + 0.04
VDDQ + 0.3
Unit
V
V
V
V
V
V
V
V
V
V
5, 6
2
3
4
Notes
1
1
Input voltage level,
VIN (DC)
CK and /CK inputs
Input differential cross point
VIX (DC)
voltage, CK and /CK inputs
Input differential voltage,
VID (DC)
CK and /CK inputs
L
VDD, VDDQ
VDD, VDDQ
VSS, VSSQ
VREF
VTT
VIH (DC)
VIL (DC)
DDR400
DDR333
od
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–0.3
—
–0.3
—
0.5
×
VDDQ
−
0.2V
0.36
0.5
×
VDDQ
—
VREF – 0.15
VDDQ + 0.3
0.5
×
VDDQ +
0.2V
VDDQ + 0.6
Notes: 1.
2.
3.
4.
5.
6.
VDDQ must be lower than or equal to VDD.
VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
VIN (DC) specifies the allowable DC execution of each differential input.
VID (DC) specifies the input differential voltage required for switching.
VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
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Preliminary Data Sheet E0887E20 (Ver. 2.0)
5