EEWORLDEEWORLDEEWORLD

Part Number

Search

ML4556-33

Description
60V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,6 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

ML4556-33 Overview

60V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE

ML4556-33 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-CEMW-N1
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage60 V
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CEMW-N1
Number of terminals1
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 255  2064  779  2915  2296  6  42  16  59  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号