UNISONIC TECHNOLOGIES CO., LTD
UT60N03
30V, 60A N-CHANNEL LOGIC
LEVEL MOSFET
1
1
TO-220
TO-251
Power MOSFET
DESCRIPTION
This device employs advanced MOSFET technology and features
low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the
overall efficiency of DC/DC converters and allows operation to higher
switching frequencies.
1
TO-252
1
TO-252D
FEATURES
* R
DS(ON)
< 23mΩ @ V
GS
=10V, I
D
=30A
* R
DS(ON)
< 30mΩ @ V
GS
=4.5V, I
D
=19A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
SYMBOL
ORDERING INFORMATION
Ordering Number
Halogen Free
UT60N03G-TA3-T
UT60N03G-TM3-T
UT60N03G-TN3-R
UT60N03G-TND-R
D: Drain
S: Source
Package
TO-220
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tape Reel
Lead Free
UT60N03L-TA3-T
UT60N03L-TM3-T
UT60N03L-TN3-R
UT60N03L-TND-R
Note: Pin Assignment: G: Gate
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-237.E
UT60N03
MARKING
Power MOSFET
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QW-R502-237.D
UT60N03
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (V
GS
=10V)
I
D
60
A
TO-220
60
Power Dissipation
W
TO-251/TO-252
45
P
D
TO-220
0.4
W/°C
Derate above 25°C
TO-251/TO-252
0.37
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
100
2.5
2.73
UNIT
°C/W
°C/W
PARAMETER
TO-220
Junction to Ambient
TO-251/TO-252
TO-220
Junction to Case
TO-251/TO-252
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UT60N03
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=25V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=19A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Power MOSFET
MIN
30
TYP MAX UNIT
V
µA
nA
V
mΩ
pF
pF
pF
90
11
49
83
27
28
48
6
26
120
52
28
18
9.6
1.0
3.4
3.4
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
1
±100
1
14
24
900
210
90
3
23
30
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=15V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Time
t
(ON)
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=15V, I
D
=7.9A, R
L
=18Ω, V
GS
=4.5V
Turn-OFF Time
t
(OFF)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Turn-ON Time
t
(ON)
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=15V, I
D
=7.9A, R
L
=18Ω, V
GS
=10V
Turn-OFF Time
t
(OFF)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
5V
V
GS
=0V~5V,V
DD
=15V,I
D
=19A I
G
=1.0mA
Total Gate Charge
Q
G
10V
V
GS
=0V~10V,V
DD
=15V,I
D
=19A,I
G
=1.0mA
Threshold Gate Charge
Q
G(TH)
V
GS
=0V~1V,V
DD
=15V,I
D
=19A I
G
=1.0mA
Gate-Source Charge
Q
GS
V
DD
=15V, I
D
=19A I
G
=1.0mA
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SD
=19A
Drain-Source Diode Forward Voltage
V
SD
I
SD
=10A
Reverse Recovery Time
t
rr
I
SD
=9A, dI
S
/dt =100A/s,
Reverse Recovery Charge
Q
RR
28
14
1.5
1.25
1.0
58
70
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
12
10
8
6
4
2
0
0
400
600
200
800
Source to Drain Voltage,V
SD
(mV)
V
GS
10%
t
D(ON)
t
THL
t
D(OFF)
t
TLH
Switching Time Waveforms
V
DS
90%
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