UNISONIC TECHNOLOGIES CO., LTD
UT70N03
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The
UT70N03
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* R
DS(ON)
< 9mΩ @ V
GS
=10V, I
D
=33A
* R
DS(ON)
< 18mΩ @ V
GS
=4.5V, I
D
=20A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT70N03L-TM3-T
UT70N03G-TM3-T
UT70N03L-TN3-T
UT70N03G-TN3-T
UT70N03L-TN3-R
UT70N03G-TN3-R
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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UT70N03
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
60
A
Pulsed Drain Current
I
DM
195
A
53
W
Power Dissipation
P
D
Linear Derating Factor
0.36
W/°C
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
110
2.8
UNIT
℃
/W
℃
/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=30V, V
GS
=0V
V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
V
DS
=10V, I
D
=33A
MIN
30
1
±100
1
3
9
18
35
1485
245
170
16.5
5
10.3
8.2
105
21.4
8.5
1.3
60
195
TYP
MAX UNIT
V
µA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=20V, V
GS
=4.5V,
Gate Source Charge
Q
GS
I
D
=33A
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V, V
DS
=15V, I
D
=33A,
R
D
=0.45Ω, R
G
=3.3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note 2)
V
SD
I
S
=60A, V
GS
=0V
Maximum Body-Diode Continuous Current
I
S
V
D
=V
G
=0V, V
S
=1.3V
Pulsed Source Current (Body Diode)
I
SM
(Note 1)
Note :1. Pulse width limited by safe operating area.
Note :2.
Pulse width < 300us, duty cycle < 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT70N03
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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