N-CHANNEL ENHANCEMENT MODE
| UT70N03L-TM3-T | UT70N03 | UT70N03G-TM3-T | UT70N03G-TN3-R | UT70N03G-TN3-T | UT70N03L-TN3-R | UT70N03L-TN3-T | |
|---|---|---|---|---|---|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE |
| Is it Rohs certified? | - | - | - | conform to | conform to | conform to | conform to |
| Maker | - | - | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
| Parts packaging code | - | - | - | TO-252 | TO-252 | TO-252 | TO-252 |
| package instruction | - | - | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | - | - | - | 4 | 4 | 4 | 4 |
| Reach Compliance Code | - | - | - | compli | compli | compli | compli |
| ECCN code | - | - | - | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | - | - | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | - | - | 30 V | 30 V | 30 V | 30 V |
| Maximum drain current (ID) | - | - | - | 60 A | 60 A | 60 A | 60 A |
| Maximum drain-source on-resistance | - | - | - | 0.009 Ω | 0.009 Ω | 0.009 Ω | 0.009 Ω |
| FET technology | - | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | - | - | - | TO-252 | TO-252 | TO-252 | TO-252 |
| JESD-30 code | - | - | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | - | - | - | 1 | 1 | 1 | 1 |
| Number of terminals | - | - | - | 2 | 2 | 2 | 2 |
| Operating mode | - | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | - | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | - | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | - | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | - | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | - | - | - | 195 A | 195 A | 195 A | 195 A |
| Certification status | - | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | - | - | - | YES | YES | YES | YES |
| Terminal form | - | - | - | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | - | - | - | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | - | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | - | - | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | - | - | - | SILICON | SILICON | SILICON | SILICON |
京公网安备 11010802033920号
EEWORLD
