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UT70N03G-TM3-T

Description
N-CHANNEL ENHANCEMENT MODE
File Size143KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UT70N03G-TM3-T Overview

N-CHANNEL ENHANCEMENT MODE

UNISONIC TECHNOLOGIES CO., LTD
UT70N03
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The
UT70N03
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* R
DS(ON)
< 9mΩ @ V
GS
=10V, I
D
=33A
* R
DS(ON)
< 18mΩ @ V
GS
=4.5V, I
D
=20A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT70N03L-TM3-T
UT70N03G-TM3-T
UT70N03L-TN3-T
UT70N03G-TN3-T
UT70N03L-TN3-R
UT70N03G-TN3-R
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-269.c

UT70N03G-TM3-T Related Products

UT70N03G-TM3-T UT70N03 UT70N03G-TN3-R UT70N03G-TN3-T UT70N03L-TM3-T UT70N03L-TN3-R UT70N03L-TN3-T
Description N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE
Is it Rohs certified? - - conform to conform to - conform to conform to
Maker - - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - - TO-252 TO-252 - TO-252 TO-252
package instruction - - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts - - 4 4 - 4 4
Reach Compliance Code - - compli compli - compli compli
ECCN code - - EAR99 EAR99 - EAR99 EAR99
Configuration - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - - 30 V 30 V - 30 V 30 V
Maximum drain current (ID) - - 60 A 60 A - 60 A 60 A
Maximum drain-source on-resistance - - 0.009 Ω 0.009 Ω - 0.009 Ω 0.009 Ω
FET technology - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - - TO-252 TO-252 - TO-252 TO-252
JESD-30 code - - R-PSSO-G2 R-PSSO-G2 - R-PSSO-G2 R-PSSO-G2
Number of components - - 1 1 - 1 1
Number of terminals - - 2 2 - 2 2
Operating mode - - ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - - N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - - 195 A 195 A - 195 A 195 A
Certification status - - Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount - - YES YES - YES YES
Terminal form - - GULL WING GULL WING - GULL WING GULL WING
Terminal location - - SINGLE SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications - - SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials - - SILICON SILICON - SILICON SILICON
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