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UTD436-TN3-T

Description
N-CHANNEL ENHANCEMENT MODE
CategoryDiscrete semiconductor    The transistor   
File Size145KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

UTD436-TN3-T Overview

N-CHANNEL ENHANCEMENT MODE

UTD436-TN3-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.013 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)130 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UTD436
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The
UTD436
uses UTC’s advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* R
DS(ON)
<7.5mΩ @V
GS
=10V, I
D
=20A
* R
DS(ON)
<13mΩ @V
GS
=4.5V, I
D
=20A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Lead-free:
UTD436L
Halogen-free: UTD436G
1.Gate
3.Source
ORDERING INFORMATION
Normal
UTD436-TN3-R
UTD436-TN3-T
Ordering Number
Lead Free
UTD436L-TN3-R
UTD436L-TN3-T
Halogen Free
UTD436G-TN3-R
UTD436G-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-258.a

UTD436-TN3-T Related Products

UTD436-TN3-T UTD436 UTD436-TN3-R UTD436G-TN3-R UTD436G-TN3-T UTD436L-TN3-R UTD436L-TN3-T
Description N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE N-CHANNEL ENHANCEMENT MODE
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
Parts packaging code TO-252 - TO-252 TO-252 TO-252 TO-252 TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 - 4 4 4 4 4
Reach Compliance Code compli - compli compli compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V 30 V 30 V 30 V 30 V
Maximum drain current (ID) 60 A - 60 A 60 A 60 A 60 A 60 A
Maximum drain-source on-resistance 0.013 Ω - 0.013 Ω 0.013 Ω 0.013 Ω 0.013 Ω 0.013 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 - TO-252 TO-252 TO-252 TO-252 TO-252
JESD-30 code R-PSSO-G2 - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 - 1 1 1 1 1
Number of terminals 2 - 2 2 2 2 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 130 A - 130 A 130 A 130 A 130 A 130 A
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES - YES YES YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? - - - conform to conform to conform to conform to
Peak Reflow Temperature (Celsius) - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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