UNISONIC TECHNOLOGIES CO., LTD
UTD436
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The
UTD436
uses UTC’s advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* R
DS(ON)
<7.5mΩ @V
GS
=10V, I
D
=20A
* R
DS(ON)
<13mΩ @V
GS
=4.5V, I
D
=20A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Lead-free:
UTD436L
Halogen-free: UTD436G
1.Gate
3.Source
ORDERING INFORMATION
Normal
UTD436-TN3-R
UTD436-TN3-T
Ordering Number
Lead Free
UTD436L-TN3-R
UTD436L-TN3-T
Halogen Free
UTD436G-TN3-R
UTD436G-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-258.a
UTD436
PARAMETER
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
a
=25℃, unless otherwise specified)
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
T
C
=25°C
I
D
60
A
Pulsed Drain Current
I
DM
130
A
Avalanche Current
I
AR
30
A
Repetitive Avalanche Energy L=0.1mH
E
AR
113
mJ
Power Dissipation
T
C
=25°C
P
D
50
W
Junction Temperature
T
J
+175
℃
Storage Temperature
T
STG
-55 ~ +175
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θ
JA
θ
JC
MIN
TYP
39
2
MAX
50
3
UNIT
℃
/W
℃
/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
10V
4.5V
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
Q
G
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
MIN
30
1
100
1
85
1.8
5.4
9.8
88
3
7.5
13
TYP
MAX UNIT
V
µA
nA
V
A
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
1
85
30
V
A
ns
nC
V
DS
=15V, V
GS
=0V, f=100kHz
1520 1825
306
214
31.9
16.2
5
9.6
7
11.6
24.2
7.7
0.71
23.8
15.7
39
20
V
DS
=15V, V
GS
=4.5V, I
D
=20A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
GS
=10V, V
DS
=15V,
Turn-ON Rise Time
t
R
R
L
=0.75Ω, R
G
=3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=1A, V
GS
=0V
Maximum Body-Diode Continuous Current
I
S
Body Diode Reverse Recovery Time
t
RR
I
F
=20A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
RR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-258.a
UTD436
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-258.a
京公网安备 11010802033920号
EEWORLD
