Preliminary
Data Sheet
NP40N10YDF, NP40N10VDF, NP40N10PDF
100 V – 40 A – N-channel Power MOS FET
Application: Automotive
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
R07DS0361EJ0201
Rev.2.01
May 13, 2013
Features
•
Low on-state resistance
⎯
R
DS(on)
= 25 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A) (NP40N10YDF)
⎯
R
DS(on)
= 26 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A) (NP40N10VDF)
⎯
R
DS(on)
= 27 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A) (NP40N10PDF)
•
Low C
iss
: C
iss
= 2100 pF TYP. (V
DS
= 25 V, V
GS
= 0 V)
•
Logic level drive type
•
Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body
Diode
Source
8-pin HSON
8
7
6 5
4
TO-252
4
TO-263
1
2
3
4
2
1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3
2
3
1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP40N10YDF-E1-AY
*
1
NP40N10YDF-E2-AY
*
1
NP40N10VDF-E1-AY
*
1
NP40N10VDF-E2-AY
*
1
NP40N10PDF-E1-AY
*
1
NP40N10PDF-E2-AY
Note:
*
1
Lead Plating
Pure Sn (Tin)
Pure Sn (Tin)
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Package
8-pin HSON
TO-252 (MP-3ZP)
TO-263 (MP-25ZP)
*1.
Pb-free (This product does not contain Pb in the external electrode)
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Page 1 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Preliminary
Absolute Maximum Ratings
(T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
∗
1
Total Power Dissipation (T
C
= 25°C)
NP40N10YDF
2
Total Power Dissipation (T
A
= 25°C)
∗
NP40N10VDF
2
Total Power Dissipation (T
A
= 25°C)
∗
NP40N10PDF
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
∗
3
Single Avalanche Energy
∗
3
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
Ratings
100
±20
±40
±80
120
1.0
1.2
1.8
T
ch
T
stg
I
AS
E
AS
175
−55
to
+175
25
61
°C
°C
A
mJ
Unit
V
V
A
A
W
W
Thermal Resistance
Channel to Case Thermal Resistance
2
Channel to Ambient Thermal Resistance
∗
R
th(ch-C)
R
th(ch-A)
NP40N10YDF
NP40N10VDF
NP40N10PDF
1.25
150
125
83.3
°C/W
°C/W
°C/W
°C/W
Notes:
*1.
T
C
= 25°C, PW
≤
10
μs,
Duty Cycle
≤
1%
*2.
Mounted on glass epoxy substrate of 40 mm
×
40 mm
×
1.6 mmt with 4% copper area (35
μm)
*3.
T
ch(start)
= 25°C, V
DD
= 50 V, R
G
= 25
Ω,
L = 100
μH,
V
GS
= 20 V
→
0 V
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Page 2 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Preliminary
Electrical Characteristics
(T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
∗
1
Drain to Source
NP40N10YDF
On-state
1
Resistance
∗
NP40N10VDF
Symbol
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
R
DS(on)1
R
DS(on)2
R
DS(on)3
R
DS(on)1
R
DS(on)2
R
DS(on)3
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
Min
Typ
Max
1
±100
2.5
25
30
36
26
31
37
27
32
38
3150
300
144
33
40
120
13
71
Unit
μA
nA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 100 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μA
V
DS
= 5.0 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 5.0 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 5.0 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 5.0 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 50 V, I
D
= 20 A,
V
GS
= 10 V,
R
G
= 0
Ω
V
DD
= 80 V,
V
GS
= 10 V,
I
D
= 40 A
I
F
= 40 A, V
GS
= 0 V
I
F
= 40 A, V
GS
= 0 V,
di/dt = 100 A/μs
1.5
20
NP40N10PDF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
1
Body Diode Forward Voltage
∗
Reverse Recovery Time
Reverse Recovery Charge
Note:
*1.
Pulsed test
2.0
40
21
23
24
21
23
24
21
23
24
2100
200
80
15
16
60
5
47
8
12
0.9
67
162
1.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
Wave Form
V
GS
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
D
V
DD
I
AS
V
DS
V
GS
0
V
DS
Wave Form
V
DS
0
t
d(on)
t
on
τ
τ
= 1
μs
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Page 3 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
Preliminary
Typical Characteristics
(T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
P
T
- Total Power Dissipation - W
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(ON)
Limited
100
(V
GS
= 10V)
PW = 100
μs
I
D(Pulse)
I
D
- Drain Current - A
10
Power Dissipation Limited
1 ms
1
Secondary Breakdown Limited
T
C
= 25°C
Single Pulse
10 ms
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Page 4 of 9
NP40N10YDF, NP40N10VDF, NP40N10PDF
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10YDF)
1000
r
th(t)
- Transient Thermal Resistance - °C/W
Preliminary
R
th(ch-A)
= 150°C/W
100
10
R
th(ch-C)
= 1.25°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm
×
40 mm
×
1.6 mmt
with 4% copper area (35
μm)
1m
10 m
100 m
1
10
100
1000
0.01
100
μ
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10VDF)
1000
r
th(t)
- Transient Thermal Resistance - °C/W
R
th(ch-A)
= 125°C/W
100
10
R
th(ch-C)
= 1.25°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm
×
40 mm
×
1.6 mmt
with 4% copper area (35
μm)
1m
10 m
100 m
1
10
100
1000
0.01
100
μ
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10PDF)
1000
r
th(t)
- Transient Thermal Resistance - °C/W
100
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 1.25°C/W
1
0.1
Single Pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Page 5 of 9
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