NP40N10YDF_13 datasheet, PDF - EEWORLD Datasheet

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NP40N10YDF_13: Description100 V â 40 A â N-channel Power MOS FET Application: Automotive; File Size157KB，11 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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NP40N10YDF_13 Overview

100 V â 40 A â N-channel Power MOS FET Application: Automotive

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Preliminary

Data Sheet

NP40N10YDF, NP40N10VDF, NP40N10PDF

100 V – 40 A – N-channel Power MOS FET

Application: Automotive

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

R07DS0361EJ0201

Rev.2.01

May 13, 2013

Features

•

Low on-state resistance

⎯

DS(on)

= 25 mΩ MAX. (V

= 10 V, I

= 20 A) (NP40N10YDF)

⎯

DS(on)

= 26 mΩ MAX. (V

= 10 V, I

= 20 A) (NP40N10VDF)

⎯

DS(on)

= 27 mΩ MAX. (V

= 10 V, I

= 20 A) (NP40N10PDF)

•

Low C

iss

: C

iss

= 2100 pF TYP. (V

= 25 V, V

= 0 V)

•

Logic level drive type

•

Designed for automotive application and AEC-Q101 qualified

Outline

Drain

Gate

Body

Diode

Source

8-pin HSON

6 5

TO-252

TO-263

1. Gate

2. Drain

3. Source

4. Fin (Drain)

1. Gate

2. Drain

3. Source

4. Fin (Drain)

1, 2, 3 : Source

: Gate

5, 6, 7, 8: Drain

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No.

NP40N10YDF-E1-AY

NP40N10YDF-E2-AY

NP40N10VDF-E1-AY

NP40N10VDF-E2-AY

NP40N10PDF-E1-AY

NP40N10PDF-E2-AY

Note:

Lead Plating

Pure Sn (Tin)

Packing

Tape 2500 p/reel

Taping (E1 type)

Taping (E2 type)

Tape 2500 p/reel

Taping (E1 type)

Taping (E2 type)

Tape 800 p/reel

Taping (E1 type)

Taping (E2 type)

Package

8-pin HSON

TO-252 (MP-3ZP)

TO-263 (MP-25ZP)

*1.

Pb-free (This product does not contain Pb in the external electrode)

R07DS0361EJ0201 Rev.2.01

May 13, 2013

Page 1 of 9

NP40N10YDF_13 Related Products

	NP40N10YDF_13	NP40N10PDF-E2-AY	NP40N10VDF-E2-AY	NP40N10YDF-E2-AY
Description	100 V â 40 A â N-channel Power MOS FET Application: Automotive	MOS FIELD EFFECT TRANSISTOR	MOS FIELD EFFECT TRANSISTOR	MOS FIELD EFFECT TRANSISTOR
Is it Rohs certified?	-	conform to	conform to	conform to
Maker	-	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
package instruction	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PDSO-F8
Contacts	-	3	3	8
Reach Compliance Code	-	compli	compli	compli
ECCN code	-	EAR99	EAR99	EAR99
Other features	-	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	-	61 mJ	61 mJ	61 mJ
Shell connection	-	DRAIN	DRAIN	DRAIN
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	-	40 A	40 A	40 A
Maximum drain current (ID)	-	40 A	40 A	40 A
Maximum drain-source on-resistance	-	0.038 Ω	0.037 Ω	0.036 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	-	R-PSSO-G2	R-PSSO-G2	R-PDSO-F8
Number of components	-	1	1	1
Number of terminals	-	2	2	8
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	175 °C	175 °C	175 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	1.8 W	1.2 W	1 W
Maximum pulsed drain current (IDM)	-	80 A	80 A	80 A
Certification status	-	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	YES
Terminal form	-	GULL WING	GULL WING	FLAT
Terminal location	-	SINGLE	SINGLE	DUAL
transistor applications	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON

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