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NP40N10YDF-E2-AY

Description
MOS FIELD EFFECT TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size157KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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NP40N10YDF-E2-AY Overview

MOS FIELD EFFECT TRANSISTOR

NP40N10YDF-E2-AY Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-PDSO-F8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)61 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountYES
Terminal surfacePure Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Preliminary
Data Sheet
NP40N10YDF, NP40N10VDF, NP40N10PDF
100 V – 40 A – N-channel Power MOS FET
Application: Automotive
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
R07DS0361EJ0201
Rev.2.01
May 13, 2013
Features
Low on-state resistance
R
DS(on)
= 25 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A) (NP40N10YDF)
R
DS(on)
= 26 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A) (NP40N10VDF)
R
DS(on)
= 27 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A) (NP40N10PDF)
Low C
iss
: C
iss
= 2100 pF TYP. (V
DS
= 25 V, V
GS
= 0 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body
Diode
Source
8-pin HSON
8
7
6 5
4
TO-252
4
TO-263
1
2
3
4
2
1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3
2
3
1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP40N10YDF-E1-AY
*
1
NP40N10YDF-E2-AY
*
1
NP40N10VDF-E1-AY
*
1
NP40N10VDF-E2-AY
*
1
NP40N10PDF-E1-AY
*
1
NP40N10PDF-E2-AY
Note:
*
1
Lead Plating
Pure Sn (Tin)
Pure Sn (Tin)
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Package
8-pin HSON
TO-252 (MP-3ZP)
TO-263 (MP-25ZP)
*1.
Pb-free (This product does not contain Pb in the external electrode)
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Page 1 of 9

NP40N10YDF-E2-AY Related Products

NP40N10YDF-E2-AY NP40N10YDF_13 NP40N10PDF-E2-AY NP40N10VDF-E2-AY
Description MOS FIELD EFFECT TRANSISTOR 100 V – 40 A – N-channel Power MOS FET Application: Automotive MOS FIELD EFFECT TRANSISTOR MOS FIELD EFFECT TRANSISTOR
Is it Rohs certified? conform to - conform to conform to
Maker Renesas Electronics Corporation - Renesas Electronics Corporation Renesas Electronics Corporation
package instruction SMALL OUTLINE, R-PDSO-F8 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 8 - 3 3
Reach Compliance Code compli - compli compli
ECCN code EAR99 - EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE - LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 61 mJ - 61 mJ 61 mJ
Shell connection DRAIN - DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V - 100 V 100 V
Maximum drain current (Abs) (ID) 40 A - 40 A 40 A
Maximum drain current (ID) 40 A - 40 A 40 A
Maximum drain-source on-resistance 0.036 Ω - 0.038 Ω 0.037 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-F8 - R-PSSO-G2 R-PSSO-G2
Number of components 1 - 1 1
Number of terminals 8 - 2 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1 W - 1.8 W 1.2 W
Maximum pulsed drain current (IDM) 80 A - 80 A 80 A
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - YES YES
Terminal form FLAT - GULL WING GULL WING
Terminal location DUAL - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
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