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KGT25N120KDA

Description
SEMICONDUCTOR TECHNICAL DATA
CategoryDiscrete semiconductor    The transistor   
File Size566KB,8 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KGT25N120KDA Overview

SEMICONDUCTOR TECHNICAL DATA

KGT25N120KDA Parametric

Parameter NameAttribute value
MakerKEC
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)450 ns
Nominal on time (ton)110 ns
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy
efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
・High
speed switching
・High
system efficiency
・Short
Circuit Withstand Times
≻10us
・Extremely
enhanced avalanche capability
G
D
E
F
O
KGT25N120KDA
A
B
S
K
P
P
1
2
3
DIM MILLIMETERS
_
A
15.90 + 0.30
_ 0.20
B
5.00 +
_
C
20.85 + 0.30
_
D
3.00 + 0.20
_
E
2.00 + 0.20
_
F
1.20 + 0.20
Max. 4.50
G
M
_
H
20.10 + 0.70
_
0.60 + 0.02
I
_
J
I
14.70 + 0.20
_
K
2.00 + 0.10
_
2.40 + 0.20
M
_
O
3.60 + 0.30
_ 0.30
5.45 +
P
_
Q
3.60 + 0.20
_
R
7.19 + 0.10
S
J
H
C
TO-247
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
@Tc=25
@Tc=100
@Tc=100
@Tc=25
@Tc=100
SYMBOL
V
CES
V
GES
I
C
I
CM
*
I
F
I
FM
P
D
T
j
T
stg
RATING
1200
±20
50
25
90
25
150
310
125
150
-55 to + 150
UNIT
V
V
A
A
A
A
A
W
W
E
G
C
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
G
E
C
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R
t h JC
R
t h JC
R
t h JA
MAX.
0.4
2.8
40
UNIT
℃/W
℃/W
℃/W
2011. 5. 25
Revision No : 0
1/8
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