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R5000

Description
0.2 A, 5000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size113KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
Download Datasheet View All

R5000 Overview

0.2 A, 5000 V, SILICON, SIGNAL DIODE, DO-41

SIYU
R
高压整流二极管
反向电压
5KV
正向电流
0.2 A
DO-15
R5000
High Voltage Rectifier
特征
Features
·反向漏电流½
Low reverse leakage
·正向浪涌承受½力较强
High forward surge capability
.034(0.9)
DIA
.028(0.7)
Reverse Voltage 5KV
Forward Current 0.2 A
1.0(25.4)
MIN
.300(7.6)
.230(5.8)
.140(3.6)
DIA
.104(2.6)
1.0(25.4)
MIN
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据
Mechanical Data
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
@TA = 75℃
最大反向峰值电流
Maximum
peak
reverse current full cycle
R5000
5
3.5
5
0.2
30
30
单½
Unit
KV
KV
KV
A
A
μA
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
Tj, TSTG
工½结温和存储温度
Operating junction and storage temperature range
-55 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
R5000
5.0
5.0
50
30
单½
Unit
V
μA
I
F
= 0.2A
TA= 25℃
TA=100℃
V
F
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
I
R
Cj
pF
大昌电子
DACHANG ELECTRONICS

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