VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3500 V
RMS
isolating voltage
• Industrial standard package
• UL approved file E78996
MAGN-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
T(AV)
Type
200 A
Modules - Thyristor, Fast
DESCRIPTION
This series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
t
q
t
rr
V
DRM
/V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
VALUES
200
T
C
85
444
7600
8000
290
265
2900
20/25
2
800/1200
- 40 to 125
kA
2
s
kA
2
s
μs
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
08
12
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
I
RRM
/I
DRM
AT T
J
= 125 °C
mA
50
VSK.F200-
Document Number: 94422
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
2500 Hz
5000 Hz
10 000 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
380
460
310
250
180
50
560
690
450
360
280
50
630
710
530
410
300
50
850
1060
760
560
410
50
2460
1570
630
410
-
50
3180
2080
860
560
-
50
V
A/μs
°C
/μF
A
80 % V
DRM
50
85
10/0.47
50
60
-
85
80 % V
DRM
-
60
10/0.47
-
85
80 % V
DRM
-
60
10/0.47
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive on-state,
surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
= 125 °C
VALUES
200
85
444
7600
8000
6400
6700
290
265
205
187
2900
1.18
1.25
0.74
0.70
1.73
600
1000
V
mA
m
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 600 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, Ra = 6
,
I
g
= 1A
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 200 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
SYMBOL
dI/dt
t
rr
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 ms, V
D
= 80 % V
DRM
,
T
J
= 25 °C
I
TM
= 350 A, dI/dt = - 25 A/μs, V
R
= 50 V, T
J
= 25 °C
I
TM
= 750 A; T
J
= T
J
maximum; dI/dt = - 25 A/μs;
V
R
= 50 V; dV/dt = 400 V/μs linear to 80 % V
DRM
20
VALUES
K
800
2
25
μs
J
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
RMS insulation voltage
Maximum peak reverse and off-state
leakage current
SYMBOL
dV/dt
V
INS
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= 125 °C, exponential to 67 % V
DRM
50 Hz, circuit to base, T
J
= 25 °C, t = 1 s
T
J
= 125 °C, rated V
DRM
/V
RRM
applied
VALUES
1000
3000
50
UNITS
V/μs
V
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GT
I
GT
V
GT
I
GD
V
GD
TEST CONDITIONS
f = 50 Hz, d% = 50
T
J
= 125 °C, f = 50 Hz, d% = 50
T
J
= 125 °C, t
p
5 ms
T
J
= 25 °C, V
ak
12 V, Ra = 6
T
J
= 125 °C, rated V
DRM
applied
VALUES
60
10
10
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
Case style
SYMBOL
T
J
T
Stg
R
thJC
R
thC-hs
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended. The
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound. Use of
cable lugs is not recommended, busbar should be
used and restrained during tightening. Threads must
be lubricated with a compound.
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.125
K/W
0.025
UNITS
°C
4 to 6
(35 to 53)
500
17.8
N·m
(lbf · in)
g
oz.
MAGN-A-PAK
Document Number: 94422
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
R
thJC
CONDUCTION
CONDUCTIONS ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.009
0.10
0.014
0.020
0.32
RECTANGULAR CONDUCTION
0.006
0.011
0.015
0.020
0.033
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case T
emperature (°C)
120
110
100
90
VSK.F
200.. S
eries
R
thJC
(DC) = 0.125 K/ W
Maximum Average On-state Power L s (W)
os
130
350
300
250
200
RMS Limit
150
100
50
0
0
40
80
120
160
200
Average On-state Current (A)
Conduc tion Angle
180°
120°
90°
60°
30°
Conduc tion Angle
30°
80
70
60
0
40
80
120
160
200
240
Average On-state Current (A)
60°
90°
120°
180°
VSK.F
200.. S
eries
Per Junction
T
J
= 125°C
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Cas T
e emperature (°C)
120
110
100
90
VSK.F
200.. S
eries
R
thJC
(DC) = 0.125 K/ W
Maximum Average On-s
tate Power L s (W)
os
130
500
450
400
350
300
250
200 RMS Limit
150
100
50
0
0
50
100
150
200
250
300
350
Average On-state Current (A)
Conduction Period
DC
180°
120°
90°
60°
30°
Conduction Period
30°
80
70
60
0
50
100
150
200
250
300
350
Average On-state Current (A)
60°
90°
120°
180°
DC
VSK.F
200.. S
eries
Per Junction
T
J
= 125°C
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 200 A
Peak Half S
ine Wave On-s
tate Current (A)
(K/ W)
7000
1
S
teady S
tate Value:
R
thJC
= 0.125 K/ W
(DC Operation)
0.1
5000
T
ransient T
hermal Impedance Z
6000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
thJC
0.01
4000
VSK.F200.. S
eries
Per Junction
3000
1
10
100
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
VSK.F
200.. S
eries
Per Junc tion
0.001
0.001
0.01
0.1
1
10
100
S
quare Wave Puls Duration (s)
e
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Peak Half S Wave On-state Current (A)
ine
8000
7000
6000
Ma ximum Non Rep etitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
No Voltage R
eap plied
R
ated V
RRM
R
eapplied
Maximum R
evers R
e ecovery Charge - Qrr (µC)
320
300
280
260
240
220
200
180
160
140
120
100
80
10
20
30
40
50
VSK.F200.. S
eries
T
J
= 125°C
60
70
80
90 100
I
T
= 1000 A
M
500 A
300 A
200 A
100 A
5000
4000
VSK.F
200.. S
eries
Per Junction
3000
0.01
0.1
Pulse T
rain Duration (s)
1
R
ate Of Fall Of Forward Current - di/ dt (A/ µs
)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
Maximum R
everse R overy Current - Irr (A)
ec
10000
Instantaneous On-state Current (A)
180
I
T
= 1000A
M
500A
300A
200A
100A
150
120
1000
T
J
= 25°C
T
J
= 125°C
VSK.F200.. Series
Per Junc tion
100
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
90
60
VSK.F200.. S
eries
T
J
= 125°C
20
30
40
50
60
70
80
90 100
30
10
R
ate Of Fall Of Forward Current - di/ dt (A/ µs
)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 94422
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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