FGH60N60SMD 600V, 60A Field Stop IGBT
March 2011
FGH60N60SMD
600V, 60A Field Stop IGBT
Features
• Maximum Junction Temperature : T
J
=175
o
C
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: V
CE(sat)
=1.9V(Typ.) @ I
C
= 60A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Solar
Inverter, UPS, SMPS, IH and PFC applications where low con-
duction and switching losses are essential.
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
E
C
G
C
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM (1)
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100 C
o
Ratings
600
±
20
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Units
V
V
A
A
A
A
A
A
W
W
o
o
o
C
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
1
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FGH60N60SMD Rev. A1
FGH60N60SMD 600V, 60A Field Stop IGBT
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(Diode)
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
-
Max.
0.25
1.1
40
Units
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FGH60N60SMD
Device
FGH60N60SMD
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
ΔBV
CES
ΔT
J
I
CES
I
GES
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage V
GE
= 0V, I
C
= 250μA
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250μA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
-
-
-
-
0.6
-
-
-
-
250
±400
V
V/
o
C
μA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
I
C
= 250μA, V
CE
= V
GE
I
C
= 60A
,
V
GE
= 15V
I
C
= 60A
,
V
GE
= 15V,
T
C
= 175
o
C
3.5
-
-
4.5
1.9
2.1
6.0
2.5
-
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
-
-
-
2915
270
85
-
-
-
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
V
CC
= 400V, I
C
= 60A,
R
G
= 3Ω, V
GE
= 15V,
Inductive Load, T
C
= 175
o
C
V
CC
= 400V, I
C
= 60A,
R
G
= 3Ω, V
GE
= 15V,
Inductive Load, T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
47
104
50
1.26
0.45
1.71
18
41
115
48
2.1
0.78
2.88
27
70
146
68
1.94
0.6
2.54
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
FGH60N60SMD Rev. A1
2
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FGH60N60SMD 600V, 60A Field Stop IGBT
Electrical Characteristics of the IGBT
Symbol
Q
g
Q
ge
Q
gc
(Continued)
Parameter
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Test Conditions
V
CE
= 400V, I
C
= 60A,
V
GE
= 15V
Min.
-
-
-
Typ.
189
20
91
Max
284
30
137
Units
nC
nC
nC
Electrical Characteristics of the Diode
Symbol
V
FM
E
rec
t
rr
Q
rr
T
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
I
F
= 30A
Test Conditions
T
C
= 25
o
C
T
C
= 175 C
T
C
=
I
F
=30A, dI
F
/dt = 200A/μs
175
o
C
T
C
= 25
o
C
T
C
= 175
o
C
T
C
= 25
o
C
T
C
= 175
o
C
o
Min.
-
-
-
-
-
-
-
Typ.
2.1
1.7
79
30
72
44
238
Max
2.7
-
-
39
-
62
-
Units
V
uJ
ns
Diode Reverse Recovery Charge
nC
FGH60N60SMD Rev. A1
3
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FGH60N60SMD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
T
C
= 25 C
o
Figure 2. Typical Output Characteristics
180
T
C
= 175 C
o
20V
15V
12V
10V
20V
15V
12V
10V
150
Collector Current, I
C
[A]
150
Collector Current, I
C
[A]
120
90
60
V
GE
= 8V
120
90
60
30
0
0
2
4
Collector-Emitter Voltage, V
CE
[V]
6
V
GE
= 8V
30
0
0
2
4
Collector-Emitter Voltage, V
CE
[V]
6
Figure 3. Typical Saturation Voltage
Characteristics
180
150
Collector Current, I
C
[A]
Common Emitter
V
GE
= 15V
T
C
= 25 C
o
Figure 4. Transfer Characteristics
180
150
Collector Current, I
C
[A]
Common Emitter
V
CE
= 20V
T
C
= 25 C
T
C
= 175 C
o
o
120
90
60
30
0
0
T
C
= 175 C
o
120
90
60
30
0
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
5
2
4
6
8
10
Gate-Emitter Voltage,V
GE
[V]
12
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Collector-Emitter Voltage, V
CE
[V]
Common Emitter
V
GE
= 15V
Figure 6. Saturation Voltage vs. V
GE
20
Collector-Emitter Voltage
,
V
CE
[V]
Common Emitter
T
C
= -40 C
o
3.0
120A
16
2.5
60A
12
2.0
8
60A
120A
1.5
I
C
= 30A
4
I
C
= 30A
1.0
25
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, T
C
[ C]
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
FGH60N60SMD Rev. A1
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FGH60N60SMD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
20
Collector-Emitter Voltage
,
V
CE
[V]
Common Emitter
Figure 8. Saturation Voltage vs. V
GE
20
Common Emitter
Collector-Emitter Voltage, V
CE
[V]
T
C
= 25 C
o
T
C
= 175 C
o
16
16
12
12
8
60A
120A
8
60A
120A
4
I
C
= 30A
4
I
C
= 30A
0
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
Figure 9. Capacitance Characteristics
7000
6000
Capacitance [pF]
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25 C
o
Figure 10. Gate charge Characteristics
15
Common Emitter
o
Gate-Emitter Voltage, V
GE
[V]
T
C
= 25 C
12
V
CC
= 200V
300V
5000
4000
C
ies
9
400V
3000
2000
C
oes
6
1000
C
res
3
0
0.1
1
10
Collector-Emitter Voltage, V
CE
[V]
30
0
0
40
80
120
160
Gate Charge, Q
g
[nC]
200
Figure 11. SOA Characteristics
300
100
Collector Current, I
c
[A]
100
μ
s
1ms
10 ms
DC
10
μ
s
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
80
t
r
60
Switching Time [ns]
10
40
t
d(on)
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 60A
T
C
= 25 C
T
C
= 175 C
o
o
1
*Notes:
20
0.1
1. T
C
= 25 C
2. T
J
= 175 C
3. Single Pulse
o
o
0.01
1
10
100
Collector-Emitter Voltage, V
CE
[V]
1000
10
0
10
20
30
40
Gate Resistance, R
G
[
Ω
]
50
FGH60N60SMD Rev. A1
5
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