3LN01M_06 datasheet, PDF - EEWORLD Datasheet

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3LN01M_06: DescriptionGeneral-Purpose Switching Device Applications; File Size44KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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3LN01M_06 Overview

General-Purpose Switching Device Applications

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Ordering number : EN6138A

3LN01M

SANYO Semiconductors

DATA SHEET

N-Channel Silicon MOSFET

3LN01M

Features

•

General-Purpose Switching Device

Applications

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

PW≤10µs, duty cycle≤1%

Conditions

Ratings

±10

0.15

0.6

0.15

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)



yfs



RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

Conditions

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=100µA

VDS=10V, ID=80mA

ID=80mA, VGS=4V

ID=40mA, VGS=2.5V

ID=10mA, VGS=1.5V

VDS=10V, f=1MHz

Ratings

min

±10

0.4

0.15

0.22

2.9

3.7

6.4

7.0

5.9

2.3

3.7

5.2

12.8

1.3

typ

max

Unit

µA

Ω

Marking : YA

Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72606 / 32406PE MS IM TB-00002152 / 31000 TS (KOTO) TA-1985 No.6138-1/4

3LN01M

100

Ciss, Coss, Crss -- VDS

f=1MHz

Gate-to-Source Voltage, VGS -- V

VGS -- Qg

VDS=10V

ID=150mA

Ciss, Coss, Crss -- pF

Ciss

Coss

Crss

1.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Drain-to-Source Voltage, VDS -- V

0.20

IT00039

Total Gate Charge, Qg -- nC

IT00040

PD -- Ta

Allowable Power Dissipation, PD -- W

0.15

0.10

0.05

100

120

140

160

Ambient Temperature, Ta --

°C

IT00041

Note on usage : Since the 3LN01M is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

in the customer's products or equipment.

SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any

and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO Semiconductor products (including technical data,services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic

or mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. SANYO Semiconductor believes information herein is accurate

and reliable, but no guarantees are made or implied regarding its use or any infringements of

intellectual property rights or other rights of third parties.

This catalog provides information as of March, 2006. Specifications and information herein are subject

to change without notice.

PS No.6138-4/4

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