Ordering number : EN6546A
3LN01SS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
3LN01SS
Features
•
•
•
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Conditions
Ratings
30
±10
0.15
0.6
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
30
1
±10
0.4
0.15
0.22
2.9
3.7
6.4
7.0
5.9
2.3
3.7
5.2
12.8
1.3
typ
max
Unit
V
µA
µA
V
S
Ω
Ω
Ω
pF
pF
pF
Marking : YA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
http://semicon.sanyo.com/en/network
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406PE MS IM TB-00002158 / 52200 TS IM TA-1986 No.6546-1/4
3LN01SS
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
Ratings
min
typ
19
65
155
120
1.58
0.26
0.31
0.87
1.2
max
Unit
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
7029-003
Top View
1.4
0.3
Switching Time Test Circuit
4V
0V
VIN
VIN
VDD=15V
ID=80mA
RL=187.5Ω
0.25
PW=10µs
D.C.≤1%
D
G
VOUT
3
1.4
0.8
1
0.3
2
0.2
0.45
0.6
3LN01SS
0.1
P.G
50Ω
S
1
2
0.07
3
Bottom View
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
0.16
0.14
0.12
0.10
0.08
ID -- VDS
3.0
V
0.30
ID -- VGS
--25
Ta=
°
C
3.5V
4.0V
V
6.0
2.5
V
V
2.0
Drain Current, ID -- A
VDS=10V
0.25
Drain Current, ID -- A
0.15
VGS=1.5V
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
IT00029
0.10
25
°
C
Ta
=
0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
--2
5
°
C
0.05
75
°
C
75
°
C
0.20
25
No.6546-2/4
°
C
3LN01SS
10
RDS(on) -- VGS
Ta=25°C
10
RDS(on) -- ID
VGS=4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
7
5
Ta=75°C
3
80mA
ID=40mA
25°C
--25°C
2
1.0
0.01
2
3
5
7
0.1
2
3
5
IT00032
Gate-to-Source Voltage, VGS -- V
10
IT00031
100
RDS(on) -- ID
Drain Current, ID -- A
RDS(on) -- ID
VGS=2.5V
7
VGS=1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
5
3
2
5
Ta=75°C
25°C
3
--25°C
10
7
5
3
2
Ta=75°C
--25°C
25°C
2
1.0
0.01
2
3
5
7
0.1
2
3
5
IT00033
1.0
0.001
2
3
5
7
0.01
2
3
5
IT00034
Drain Current, ID -- A
7
RDS(on) -- Ta
Forward Transfer Admittance,
yfs
-- S
Drain Current, ID -- A
1.0
7
5
3
2
yfs
-- ID
VDS=10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
6
5
4
3
V
2.5
S=
G
A, V
4.0V
0m
4
S=
I D=
, VG
mA
=80
ID
--
Ta=
25
°
C
75
°
C
25
°
C
0.1
7
5
3
2
2
1
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
0.01
0.01
2
3
5
7
0.1
2
3
5
IT00036
Ambient Temperature, Ta --
°C
1.0
7
5
IT00035
1000
7
IS -- VSD
VGS=0V
Drain Current, ID -- A
SW Time -- ID
VDD=15V
VGS=4V
Source Current, IS -- A
3
2
Switching Time, SW Time -- ns
5
3
2
75
°
C
25
°
C
--2
5
°
C
td(off)
tf
Ta
=
0.1
7
5
3
2
100
7
5
3
2
tr
td(on)
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
10
0.01
2
3
5
7
0.1
2
IT00038
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
No.6546-3/4
3LN01SS
100
7
5
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
10
9
8
7
6
5
4
3
2
1
VGS -- Qg
VDS=10V
ID=150mA
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, VDS -- V
0.2
IT00039
Total Gate Charge, Qg -- nC
IT00040
PD -- Ta
Allowable Power Dissipation, PD -- W
0.15
0.1
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT01964
Note on usage : Since the 3LN01SS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
PS No.6546-4/4
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