TSB1412CPRO datasheet, PDF - EEWORLD Datasheet

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TSB1412CPRO: DescriptionLow Vcesat PNP Transistor; CategoryDiscrete semiconductor The transistor; File Size241KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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TSB1412CPRO Overview

Low Vcesat PNP Transistor

TSB1412CPRO Parametric

Parameter Name	Attribute value
Maker	Taiwan Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	180
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz

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TSB1412

Low Vcesat PNP Transistor

TO-252

(DPAK)

Pin Definition:

1. Base

2. Collector

3. Emitter

PRODUCT SUMMARY

CBO

CEO

CE(SAT)

-40V

-30V

-5A

-0.5V @ I

/ I

= -4A / -100mA

Features

●

Low V

CE(SAT)

-0.36 @ I

/ I

= -4A / -100mA (Typ.)

Complementary part with TSD2118

Ordering Information

Part No.

Package

Packing

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

TSB1412CP RO

TO-252

2.5Kpcs / 13” Reel

TSB1412CP ROG

TO-252

2.5Kpcs / 13” Reel

Note:

“G” is denote Halogen Free Product.

Absolute Maximum Rating

=25

C unless otherwise noted)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Operating Junction Temperature

Operating Junction and Storage Temperature Range

Note:

Single pulse, Pw=10ms

Pulse

Ta=25ºC

Tc=25ºC

Symbol

CBO

CEO

EBO

STG

Limit

-40

-30

-6

-5

-10 (note)

+150

- 55 to +150

Unit

Electrical Specifications

=25

C unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

Conditions

= -50uA, I

= 0

= -1mA, I

= 0

= -50uA, I

= 0

= -25V, I

= 0

= -5V, I

= 0

/ I

= -4A / -100mA

= -2V, I

= -500mA

=-6V, I

=-50mA,

f=30MHz

Symbol

CBO

CEO

EBO

CBO

EBO

CE(SAT)

Cob

Min

-40

-30

-6

180

Typ

-0.36

120

Max

-0.5

390

Unit

MHz

Output Capacitance

= -20V, f=1MHz

* Pulse Test:

Pulse Width

≤380uS,

Duty Cycle≤2%

1/4

Version: B11

TSB1412CPRO Related Products

	TSB1412CPRO	TSB1412CPROG	TSB1412_11
Description	Low Vcesat PNP Transistor	Low Vcesat PNP Transistor	Low Vcesat PNP Transistor
Maker	Taiwan Semiconductor	Taiwan Semiconductor	-
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	-
Reach Compliance Code	unknow	compli	-
ECCN code	EAR99	EAR99	-
Maximum collector current (IC)	5 A	5 A	-
Collector-emitter maximum voltage	30 V	30 V	-
Configuration	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	180	180	-
JEDEC-95 code	TO-252	TO-252	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	-
Number of components	1	1	-
Number of terminals	2	2	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	PNP	PNP	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	YES	-
Terminal form	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	-
Transistor component materials	SILICON	SILICON	-
Nominal transition frequency (fT)	120 MHz	120 MHz	-

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