TSB1412
Low Vcesat PNP Transistor
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-40V
-30V
-5A
-0.5V @ I
C
/ I
B
= -4A / -100mA
Features
●
●
Low V
CE(SAT)
-0.36 @ I
C
/ I
B
= -4A / -100mA (Typ.)
Complementary part with TSD2118
Ordering Information
Part No.
Package
Packing
Structure
●
●
Epitaxial Planar Type
PNP Silicon Transistor
TSB1412CP RO
TO-252
2.5Kpcs / 13” Reel
TSB1412CP ROG
TO-252
2.5Kpcs / 13” Reel
Note:
“G” is denote Halogen Free Product.
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note:
Single pulse, Pw=10ms
DC
Pulse
Ta=25ºC
Tc=25ºC
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
-40
-30
-6
-5
-10 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Specifications
(T
A
=25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Conditions
I
C
= -50uA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50uA, I
C
= 0
V
CB
= -25V, I
E
= 0
V
EB
= -5V, I
C
= 0
I
C
/ I
B
= -4A / -100mA
V
CE
= -2V, I
C
= -500mA
V
CE
=-6V, I
C
=-50mA,
f=30MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(SAT)
*h
FE
f
T
Cob
Min
-40
-30
-6
--
--
--
180
--
--
Typ
--
--
--
--
--
-0.36
--
120
60
Max
--
--
--
-0.5
-0.5
-0.5
390
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
Output Capacitance
V
CB
= -20V, f=1MHz
* Pulse Test:
Pulse Width
≤380uS,
Duty Cycle≤2%
1/4
Version: B11
TSB1412
Low Vcesat PNP Transistor
Electrical Characteristics Curve
(T
A
=25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
v.s. Ic
Figure 3. V
BE(SAT)
v.s. Ic
Figure 4. Output Characteristics
Figure 5. Output Characteristics
Figure 6. Power Derating Curve
2/4
Version: B11
TSB1412
Low Vcesat PNP Transistor
TO-252 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
G1
G2
H
I
J
K
L
M
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.290 BSC
0.090 BSC
4.600 BSC
0.180 BSC
7.000
7.200
0.275
0.283
6.000
6.200
0.236
0.244
6.400
6.604
0.252
0.260
2.210
2.387
0.087
0.094
0.010
0.127
0.000
0.005
5.232
5.436
0.206
0.214
0.666
0.889
0.026
0.035
0.633
0.889
0.025
0.035
0.508 REF
0.020 REF
0.900
1.500
0.035
0.059
2.743 REF
0.108 REF
0.660
0.940
0.026
0.037
1.397
1.651
0.055
0.065
1.100 REF
0.043 REF
3/4
Version: B11
TSB1412
Low Vcesat PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: B11
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