Data Sheet
Band Switching Diode
DAP236U
Applications
High frequency switching
Dimensions
(Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Each lead has same dimension
0.15±0.05
同寸法
Land
size figure
(Unit : mm)
1.3
Features
1)Ultra small mold type. (UMD3)
2)High reliability
(2)
（0.65）
（0.65）
(1)
0.65
1.25±0.1
0½0.1
0.1Min
0.9MIN.
2.1±0.1
0.8MIN
UMD3
1.3±0.1
0.7±0.1
0.9±0.1
Construction
Silicon epitaxial planar
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Structure
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
3.5±0.05
1.75±0.1
8.0±0.2
2.4±0.1
5.5±0.2
2.25±0.1
0
4.0±0.1
φ0.5±0.05
0½0.1
2.4±0.1
1.25±0.1
Absolute
maximum ratings
(Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
V
R
Reverse voltage (DC)
Junction temperature
Tj
Storage temperature
Tstg
Limits
150
35
125
55
to
125
Unit
mW
V
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Forward operating resistance
I
R
Ct
rf
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.0
10
1.2
0.9
Unit
V
nA
pF
Ω
I
F
=10mA
V
R
=25V
Conditions
V
R
=6V , f=1MHz
I
F
=2mA , f=100MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.06 - Rev.A
1.6
(3)
DAP236U
Data Sheet
100
10
Ta=75℃
Ta=125℃
10
f=1MHz
FORWARD CURRENT : I
F
(mA)
REVERSE CURRENT : I
R
(nA)
10
Ta=125℃
1
Ta=25℃
0.1
Ta=25℃
0.01
Ta=25℃
0.001
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
Ta=75℃
Ta=25℃
0.1
1
0.01
0.001
0
100
200
300
400
500
600
700
800
900 1000 1100 1200
0.0001
0
10
20
30
40
50
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
10
f=100MHz
860
0.1
Ta=25℃
I
F
=10mA
n=30pcs
0.09
Ta=25℃
V
R
=25V
n=30pcs
FORWARD VOLTAGE : V
F
(mV)
REVERSE CURRENT : I
R
(nA)
FORWARD OPERATING
RESISTANCE:rf(Ω)
850
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
AVE:0.0116nA
840
1
830
820
AVE:829.3mV
0.1
0.01
810
0.1
1
10
V
F
DISPERSION MAP
FORWARD CURRENT : I
F
(mA)
rf-I
F
CHARACTERISTICS
I
R
DISPERSION MAP
1
0.9
Ta=25℃
V
R
=6V
f=1MHz
n=10pcs
20
5
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
AVE:0.807pF
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
Ifsm
15
8.3ms
10
1cyc
REVERSE RECOVERY TIME:trr(ns)
4
3
Ta=25℃
V
R
=6V
I
F
=10mA
RL=100Ω
Irr=0.1*I
R
n=10pcs
2
5
AVE:5.60A
0
1
AVE:1.20ns
0
Ct DISPERSION MAP
I
FSM
DISRESION MAP
trr DISPERSION MAP
1
0.9
0.8
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
FORWARD OPERATING
RESISTANCE:rf(Ω)
8
7
6
5
4
3
2
1
0
1
8.3ms
8.3ms
1cyc
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta=25℃
f=100MHz
I
F
=2mA
n=10pcs
10
9
Ifsm
100
Ifsm
t
10
AVE:0.602Ω
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
0.1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
1
100
FORWARD CURRENT : I
F
(mA)
rf DISPERSION MAP
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2/3
2011.06 - Rev.A
DAP236U
Data Sheet
1000
10
Rth(j-a)
9
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
8
7
6
5
4
3
2
1
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:0.88kV
AVE:6.63kV
100
Rth(j-c)
Mounted on epoxy board
10
IM=1mA
I
F
=10mA
1ms
time
300us
1
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
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Notes
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