PRELIMINARY
SRAM PCMCIA Card
SEA Series
SRAM Memory Card
128 kB through512 kB
The EDI
SEA
SRAM Series memory cards offer a
high performance nonvolatile storage solution for
code and data storage, disk caching, and write
intensive mobile and embedded applications.
Packaged in PCMCIA type I housing the EDI
SRAM SEA series is based on 1 or 4Mbit SRAM
memories, providing densities from 128 Kbytes to
512 Kbytes.
The SEA series of SRAM memory cards requires a
5V power supply and operates at speeds to 150ns.
The cards are based on advanced CMOS technology
providing very low power and reliable data retention
characteristics. EDI’s SRAM cards contain a
rechargeable lithium battery and recharge circuitry,
eliminating the need for replaceable batteries found
in many SRAM cards.
EDI’s standard cards are shipped with EDI’s SRAM
Logo. Cards are also available with blank housings
(no Logo). The blank housings are available in both a
recessed (for label) and flat housing. Please contact
EDI sales representative for further information on
Custom artwork.
FEATURES
•
High Performance SRAM memory Card
•
Single 5 Volt Supply
•
Fast Access times: 150ns
•
x8 interface (subset of PCMCIA standard)
•
Low Power CMOS technology provides very low
power and reliable data retention characteristics
-
operating current 80mA maximum
-
standby current < 100µA typical
•
Rechargeable Lithium battery with recharge circuitry
-
eliminates the need for replaceable batteries
- standby current during recharge typically < 2mA
- battery backup time
• 18 months
- typical
typical based on 512kB (lower densities will
have greater storage times)
•
Unlimited write cycles, no endurance issues
•
2KB EEPROM attribute memory containing CIS
(optional)
•
Optional Hardware Write Protect switch
•
PC Card Standard Type I Form Factor
Block Diagram
512KB SRAM card Shown
[A0..A18]
ADDREsS BUS
+ + + + +
CE1#
CE2#
WE#
OE#
REG#
A0
decoder
and
control
logic
/CS
/CS-A
/RD
/WR
CTRL
/RD
/WR
[A1..A11]
ATTRIBUTE
MEMORY
optional
SRAM
512K x 8
S1
WP
Write Prot
Switch
VS1
VS2
GND
NC
NC
Vcc
/CS-A
/RD
/WR
CTRL
I/O BUFFER
[DO..D7]
[DO..D7]
Notes:
1. pull down resistor (min 100k)
+
2. pull up resistor (min 10k)
+
BVD1
BVD2
Vcc
Power Management
and
Battery Control
to internal
power
supply
Lithium Bat.
PC Card Products
August 12, 1998
1
SEA Series
PRELIMINARY
Pinout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
N.C.
Vcc
N.C.
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
GND
I/O
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
I
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Supply Voltage
I
I
I
I
I
I
I
I
I
I
I
I/O
I/O
I/O
O
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
Data bit 1
Data bit 2
Write Potect
Ground
128KB(2)
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Signal name
GND
CD1#
NC
NC
NC
NC
NC
NC
VS1
N.C.
N.C.
A17
A18
N.C.
N.C.
N.C.
Vcc
N.C.
N.C.
N.C.
N.C.
N.C.
VS2
N.C.
N.C.
N.C.
REG#
BVD2
BVD1
NC
NC
NC
CD2#
GND
I/O
O
I/O
I/O
I/O
I/O
I
I
O
Function
Ground
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Active
LOW
LOW
LOW
LOW
N.C.
LOW
I
I
I
I
I
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Extended Bus Cycle
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
Data bit 9
Data bit 10
Card Detect 2
Ground
512KB(2)
O
O
I
O
O
I/O
I/O
O
O
N.C.
Low
Low
(3)
HIGH
LOW
Notes:
1) CD1# and CD2# are grounded internal to PC Card
2) Shows density for which specified address bit is MSB.
Higher order address bits are no connects (ie 512KB A18 is MSB, A19 - A21 are NC).
3) BVD1 is an open drain output with a 10K ohm internal pull-up resistor.
PC Card Products
August 12, 1998
2
SEA Series
PRELIMINARY
Mechanical
Type I
Interconnect area
1.6mm
±
0.05
(0.063”)
1.0mm
±
0.05
(0.039”)
10.0mm MIN
(0.400”)
3.0mm MIN
Substrate area
54.0mm
±
0.10
(2.126”)
1.0mm
±
0.05
(0.039”)
85.6mm
±
0.20
(3.370”)
10.0mm MIN
(0.400”)
3.3mm
±
T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
PC Card Products
August 12, 1998
3
SEA Series
PRELIMINARY
Card Signal Description
Symbol
A0 - A25
Type
INPUT
DQ0 – DQ7
DQ8 – DQ15
C E1#, CE2#
OE#
WE#
RDY/BSY #
CD1#, CD2#
INPUT/OUT
PUT
INPUT
INPUT
INPUT
OUTPUT
OUTPUT
WP
VPP1, VPP2
VCC
GND
REG #
RST
WAIT #
BVD1, BVD2
OUTPUT
N.C.
INPUT
INPUT
OUTPUT
OUTPUT
VS1, VS2
RFU
N.C.
OUTPUT
Name and Function
ADDRESS INPUTS:
A0 through A25 enable direct addressing of up
to 64MB of memory on the card. Signal A0 is not used in word access
mode. A25 is the most significant bit. (address pins used are based on
card density,see pinout for highest used address pin)
DATA INPUT/OUTPUT:
DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and
DQ8 - DQ15 the upper (odd) byte. Upper byte is Not Connected on
this card.
CARD ENABLE 1 AND 2:
CE1# enables even byte accesses,
C E2# control signal in PCMCIA standard, to access high byte, - not
used on this card
OUTPUT ENABLE:
Active low signal enabling read data from the
memory card.
WRITE ENABLE:
Active low signal gating write data to the memory
card.
READY/BUSY OUTPUT:
Not used for SRAM cards
CARD DETECT 1 and 2:
Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WRITE PROTECT:
Follows hardware Write Protect Switch. When
Switch is placed in on position, signal is pulled high (10K ohm). When
switch is off signal is pulled low.
PROGRAM/ERASE POW ER SUPPLY:
Not used for SRAM
cards.
CARD POW ER SUPPLY:
5.0V for all internal circuitry.
GROUND:
for all internal circuitry.
ATTRIBUTE MEMORY SELECT :
only used with cards built with
optional attribute memory.
RESET:
Not used for SRAM cards
WAIT:
This signal is pulled high internally for compatibility. No wait
states are generated.
BATTERY VOLTAGE DETECT:
Provides status of Battery
voltage.
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)
BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)
BVD2 = BVD1 = Vol (data may no longer be valid, battery requires
extended recharge)
VOLTAGE SENSE:
Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V, 16 bit card has
been inserted.
RESERV ED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD:
pin may be driven
or left floating
Common Memory
/REG D15-D8
D7-D0
X
High-Z
High-Z
H
High-Z Data Out
Attribute Memory
/REG D15-D8
D7-D0
X
High-Z
High-Z
L
High-Z Data Out
FUNCTIONAL TRUTH TABLE
READ function
Function Mode
/CE2 /CE1
Standby Mode
X
H
Byte Access (8 bits)
X
L
WRITE function
Standby Mode
Byte Access (8 bits)
/OE
X
L
/WE
X
H
X
X
H
L
X
H
X
L
X
H
X
X
X
Data In
X
L
X
X
X
Data In
PC Card Products
August 12, 1998
4
SEA Series
PRELIMINARY
Absolute Maximum Ratings (2)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
DC
0°C to +60 °C
-40°C to +85 °C
Notes:
(1) During transitions, inputs may undershoot to -
2.0V or overshoot to VCC +2.0V for periods less
than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a stress
0°C to +60 °C
rating only and functional operation at these or
-40°C to +85 °C
any other conditions greater than those indicated
-0.5V to VCC+0.5V (1)
in the operational sections of this specification is
not implied. Exposure to absolute maximum
-0.5V to +7.0V
rating conditions for extended periods may affect
reliability.
Characteristics
(1)
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Sym
ICC
ICCS
ILI
ILO
VIL
VIH
VOL
VOH
Parameter
VCC Active Current
VCC Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Density
128KB
512KB
All
All
All
All
All
All
All
Notes
1
2,4
5,6
6
6
6
6
6
Min
Typ
40
40
<1
(3)
Max
80
80
10
±20
±20
Units
mA
mA
µA
µA
V
V
V
V
Test Conditions
VCC = 5.25V
tcycle = 150ns
VCC = 5.25V
Control Signals = VCC
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
< 0.1
0
3.85
0.8
VCC
+0.5
0.4
VCC
IOL = 3.2mA
IOH = -2.0mA
VCC-
0.4
Notes:
1. All currents are for x8 mode and are RMS values unless otherwise specified.
2. Control Signals: CE
1
#, CE
2
#, OE#, WE#, REG#
3. Typical: VCC = 5V, T = +25C
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully charged battery.
ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully discharged battery (0V). Battery will
recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
internal pull-up resistors.
Battery Characteristics
Parameter
Battery Life
Battery
Backup Time
Density
All
128KB
512KB
Notes
(1)
(2)
Type I
10
24
18
Units
years
months
(typical)
Conditions
Normal operation, T=25C
T=25C
Battery backup time is a calculated
value and is not guaranteed. This
should not be used to schedule
battery recharging.
Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.
PC Card Products
August 12, 1998
5
SEA Series
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