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G4S06510QT

Description
,YES,QFN8*8,single core,650,10(130°C),19(100°C),33.6,105,0.95,0.25,50,1.5(150°C),100(150°C)
CategoryDiscrete semiconductor   
File Size532KB,5 Pages
ManufacturerGlobal Power Technology Co., Ltd
Download Datasheet Parametric View All

G4S06510QT Overview

,YES,QFN8*8,single core,650,10(130°C),19(100°C),33.6,105,0.95,0.25,50,1.5(150°C),100(150°C)

G4S06510QT Parametric

Parameter NameAttribute value
AEC-Q101 Qualified
RoHS QualifiedYES
PackageQFN8*8
Config.single core
Vrrm(V)650
IF(A) Tc=160℃10(130°C)
IF(A) Tc=125℃19(100°C)
IF(A) Tc=25℃33.6
Ifsm(A) Tc=25℃105
RTH-JC(℃/W)typ0.95
Forward voltage drop VF (V) Tj=25℃ typ1.38
Forward voltage drop VF (V) Tj=25℃ max1.7
Forward voltage drop VF (V) Tj=175℃ typ1.7(150°C)
Forward voltage drop VF (V) Tj=175℃ max2.5(150°C)
Reverse leakage current IR (uA) Tj=25℃ typ0.25
Reverse leakage current IR (uA) Tj=25℃ max50
Reverse leakage current IR (uA) Tj=175℃ typ1.5(150°C)
Reverse leakage current IR (uA) Tj=175℃ max100(150°C)
产品规格书
V2020.A.0
G4S06510QT
650V/10A
碳化硅肖特基功率二极管
产品特性
正温度系数,易于并联½用
不受温度½响的开关特性
最高工½温度 150℃
零反向恢复电流
零正向恢复电压 V
产品概览
V
RRM
I
F,
T
c
≤130℃
Q
C
650
10
29
V
A
nC
产品优点
单极器件
极大降½开关损耗
并联器件中没有热崩溃
降½系统对散热片的依赖
应用领域
开关模式电源(SMPS),功率因数校正(PFC)
电机驱动,光伏逆变器,不间断电源,
风力发动机,列½牵引系统,电动½½。
产品型号
G4S06510QT
封装½式
DFN8*8
打标
G4S06510QT
G4S06510QT
©2020
泰科天润半导½科技(北京)有限公司
-
版权所有
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