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BSM150GD60DN2

Description
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ECONOPACK
CategoryDiscrete semiconductor    The transistor   
File Size928KB,6 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

BSM150GD60DN2 Overview

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ECONOPACK

BSM150GD60DN2 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionECONOPACK
Reach Compliance Codeunknown
Maximum collector current (IC)150 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X
Number of components6
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
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