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ESAB82-004R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
FUJI Diode
Symbols
V
RSM
V
RRM
Io
I
FSM
Tj
Tstg
Conditions
tw=500ns, duty=1/40
-
50Hz Square wave duty =1/2
Tc = 126˚C
Sine wave, 10ms 1shot
Ratings
48
40
5*
100
150
-40 to +150
Units
V
V
A
A
˚C
˚C
-
-
Electrical characteristics
Item
Forward voltage***
Reverse current***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
Rth(j-c)
I
F
= 2 A
V
R
=V
RRM
Junction to case
Conditions
Maximum
0.55
5
5
Units
V
mA
˚C/W
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
-
Maximum
0.3 to 0.5
2
Units
N•m
g
1
ESAB82-004R
Outline Drawings [mm]
http://www.fujisemi.com
FUJI Diode
004
004
2
ESAB82-004R
Forward Characteristic (typ.)
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FUJI Diode
Reverse Characteristic (typ.)
Tj=150°C
10
1
10
Tj=125°C
Forward Current (A)
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
Reverse Current (mA)
10
0
Tj=100°C
10
-1
IF
IR
10
-2
Tj=25°C
10
-3
0.1
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
20
30
40
50
VR
Reverse Voltage (V)
VF
Forward Voltage (V)
Forward Power Dissipation (max.)
3.5
2.0
360°
360°
Reverse Power Dissipation (max.)
DC
3.0
I
0
λ
VR
α
2.5
1.5
(W)
Forward Power Dissipation
2.0
Square wave
λ
=160°
Square wave
λ
=120°
Sine wave
λ
=180°
Reverse Power Dissipation
(W)
1.0
α
=180°
1.5
Square wave
λ
=180°
DC
WF
1.0
PR
0.5
0.5
Per 1element
0.0
0.0
0.0
0
10
20
30
40
50
0.5
1.0
1.5
2.0
2.5
3.0
Io Average Output Current
(A)
VR
Reverse Voltage
(V)
3
ESAB82-004R
Current Derating (Io-Tc) (max.)
160
1000
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FUJI Diode
Junction Capacitance Characteristic (typ.)
150
140
DC
(°C)
Square wave
λ
=180°
120
Square wave
λ
=120°
Junction Capacitance (pF)
130
Sine wave
λ
=180°
Case Temperature
100
TC
110
Square wave
λ
=60°
100
360
°
90
I
0
λ
VR=20V
CJ
80
0
1
2
3
4
5
6
7
8
10
10
100
IO
Average Output Current
(A)
VR
Reverse Voltage (V)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
1000
Peak Half - Wave Current
IFSM
(A)
100
10
1
10
100
Number of Cycles at 50Hz
4
ESAB82-004R
http://www.fujisemi.com
FUJI Diode
Transient Thermal Impedance (max.)
10
2
（℃／Ｗ）
10
1
Transient Thermal Impedance
Rth j-c:5℃/W
10
0
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
½
Time
（½½½）
5
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