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KMB4D8DN55Q

Description
FLP-8 PACKAGE
CategoryDiscrete semiconductor    The transistor   
File Size365KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KMB4D8DN55Q Overview

FLP-8 PACKAGE

KMB4D8DN55Q Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)25 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
SEMICONDUCTOR
MARKING SPECIFICATION
1. Marking method
Laser Marking.
KMB4D8DN55Q
FLP-8 PACKAGE
2. Marking
KMB4D8
DN55Q
2
1
601
3
No.
Item
Device Name
Pin No.
Lot No.
Marking
KMB4D8DN55Q
Dot
601
6
01
Description
KMB4D8DN55Q
Pin 1
Year
Week
0~9 : 2000~2009
01 : 1st Week
2006. 6. 12
Revision No : 0
1/1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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