1MBI2400U4D-170
IGBT MODULE (U series)
1700V / 2400A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Ic pulse
Conditions
Maximum ratings
1700
±20
3600
2400
7200
4800
2400
4800
14700
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
Continuous
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1)
V
iso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
°C
°C
VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(main terminal)
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
V
F
(main terminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 2400mA
V
GE
= 15V
I
C
= 2400A
V
GE
Characteristics
min.
typ.
max.
-
-
1.0
-
-
4800
5.5
6.5
7.5
-
2.47
2.65
-
2.87
-
-
2.25
2.40
-
2.65
-
-
224
-
-
1.80
-
-
0.85
-
-
1.30
-
-
0.35
-
-
2.02
2.40
-
2.22
-
-
1.80
2.15
-
2.00
-
-
0.35
-
-
0.089
-
Characteristics
min.
typ.
max.
-
-
0.0085
-
-
0.015
-
0.004
-
Units
mA
nA
V
V
nF
µs
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
= 0V, V
CE
= 10V, f = 1MHz
V
CC
= 900V, I
C
= 2400A
V
GE
= ±15V, Tj = 125°C
R
gon
= 1.8Ω, R
goff
= 0.68Ω
V
GE
= 0V
I
F
= 2400A
I
F
= 2400A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*3)
Units
°C/W
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
1MBI2400U4D-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C ,chip
VGE=20 15V 12V
IGBT Modules
5500
5000
4500
5500
5000
4500
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
VGE=20V 15V
12V
Collector current : Ic [A]
4000
3500
3000
2500
2000
1500
1000
500
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
8V
10V
Collector current : Ic [A]
4000
3500
3000
2500
2000
1500
1000
500
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
8V
10V
5500
5000
4500
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
Collector - Emitter voltage : VCE [ V ]
Tj=25°C
Tj=125°C
10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
8
Collector current : Ic [A]
4000
3500
3000
2500
2000
1500
1000
500
0
0
1
2
3
4
5
6
4
Ic=4800A
Ic=2400A
Ic=1200A
2
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
1000
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
1000
800
600
400
200
0
Dynamic Gate charge (typ.)
Tj= 25°C
VCE
VGE
25
Capacitance : Cies, Coes, Cres [ nF ]
100
15
10
5
0
10000
Cres
10
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
0
2000
4000
6000
8000
Gate charge : Qg [ nC ]
2
Gate-Emitter voltage : VGE [V]
Cies
20
1MBI2400U4D-170
IGBT Modules
Vcc=900V, VGE=±15V, Rgon=1.8Ω, Rgoff=0.68Ω, Tj=125°C
2.4
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
6.0
Vcc=900V, Ic=2400A,VGE=±15V, Tj=125°C
ton
5.0
4.0
3.0
2.0
1.0
tf
0.0
0
1
2
3
4
5
6
7
Gate resistance : Rg [ Ω ]
8
9
toff
tr
Switching time : ton, tr, toff, tf [ us ]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
500
1000 1500 2000 2500 3000 3500 4000
Collector current : Ic [ A ]
tf
toff
tr
Switching time : ton, tr, toff, tf [ us ]
2.2
ton
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Vcc=900V, VGE=±15V, Rgon=1.8Ω, Rgoff=0.68Ω, Tj= 125°C
1600
Switching loss vs. Collector current (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=2400A,VGE=±15V, Tj= 125°C
Eon
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
4
5
6
7
Gate resistance : Rg [ Ω ]
8
9
Err
Eoff
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
1400
1200
1000
800
600
400
200
0
0
Eoff
Eon
Err
500 1000 1500 2000 2500 3000 3500 4000
Collector current : Ic [ A ] , Forward current : IF [ A ]
Reverse bias safe operating area (max.)
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
500
1000
1500
2000
Collector - Emitter voltage : VCE [ V ]
± VGE=15V ,Tj = 125°C / chip
Collector current : Ic [ A ]
3
1MBI2400U4D-170
IGBT Modules
5500
5000
4500
Forward current vs. Forward on voltage (typ.)
chip
Tj=25°C
Tj=125°C
3200
Vcc=900V, VGE=±15V, Rgon=1.8Ω, Tj=125°C
Irr
Reverse recovery characteristics (typ.)
1.6
1.4
1.2
1.0
0.8
Reverse recovery current : Irr [ A ]
2800
2400
2000
1600
1200
800
400
0
0
Forward current : IF [ A ]
4000
3500
3000
2500
2000
1500
1000
500
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward on voltage : VF [ V ]
trr
0.6
0.4
0.2
0.0
500 1000 1500 2000 2500 3000 3500 4000
0.1000
Transient thermal resistance (max.)
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD
0.0100
IGBT
0.0010
0.0001
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
4
Reverse recovery time : trr [us]
Forward current : IF [ A ]
1MBI2400U4D-170
IGBT Modules
Outline Drawings, mm
Equivalent Circuit Schematic
main collector
C
sense collector
C
C
C
gate
G
E
E
E
main emitter
sense emitter
E
5
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