CPY135P datasheet, PDF - EEWORLD Datasheet

CPY135P: DescriptionPower Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size220KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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CPY135P Overview

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	not_compliant
Maximum drain current (Abs) (ID)	19 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	100 W
Terminal surface	Tin/Lead (Sn/Pb)

	CPY135P	CPY155P
Description	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
Is it Rohs certified?	incompatible	incompatible
Maker	Infineon	Infineon
Reach Compliance Code	not_compliant	not_compliant
Maximum drain current (Abs) (ID)	19 A	12 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Number of components	1	1
Maximum operating temperature	150 °C	150 °C
Maximum power dissipation(Abs)	100 W	100 W
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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