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CPY155P

Description
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size220KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

CPY155P Overview

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,

CPY155P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
Maximum drain current (Abs) (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)100 W
Terminal surfaceTin/Lead (Sn/Pb)

CPY155P Related Products

CPY155P CPY135P
Description Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Reach Compliance Code not_compliant not_compliant
Maximum drain current (Abs) (ID) 12 A 19 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum power dissipation(Abs) 100 W 100 W
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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