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Datasheet> All Categories > Discrete semiconductor> The transistor> IXTP01N100D
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IXTP01N100D

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size159KB，6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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IXTP01N100D Overview

Power Field-Effect Transistor,

IXTP01N100D Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionTO-220, 3 PIN
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID)0.4 A
Maximum drain current (ID)0.4 A
Maximum drain-source on-resistance80 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1.1 W
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)0.4 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

IXTP01N100D Preview

High Voltage
Power MOSFET
IXTY01N100D
IXTU01N100D
IXTP01N100D
D
V
DSX
R
DS(on)
=
1000V
80
N-Channel
TO-252 (IXTY)
G
S
G
S
D (Tab)
TO-251 (IXTU)
Symbol
V
DSX
V
DGX
V
GSX
V
GSM
I
DM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-251
TO-220
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C
Continuous
Transient
T
C
= 25C, Pulse Width Limited by T
J
T
C
= 25C
T
A
= 25C
Maximum Ratings
1000
1000
20
30
400
25
1.1
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
0.35
0.40
3.00
V
V
V
V
mA
W
W
C
C
C
°C
°C
Nm/lb.in.
g
g
g
G = Gate
S = Source
G
D
S
D (Tab)
TO-220AB (IXTP)
G
DS
D (Tab)
D
= Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Low R
DS(on)
HDMOS
TM
Process
• Rugged Polysilicon Gate Cell Structure
• Fast Switching Speed
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
•
•
•
•
Level Shifting
Triggers
Solid State Relays
Current Regulators
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSX
V
GS(off)
I
GSX
I
DSX(off)
R
DS(on)
I
D(on)
V
GS
= -10V, I
D
= 25A
V
DS
= 25V, I
D
= 25A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSX
, V
GS
= -10V
V
GS
= 0V, I
D
= 50mA, Note 1
V
GS
= 0V, V
DS
= 25V, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
1000
- 2.0
- 4.5
V
V
100
nA
10
A
250
A
50
400
80

mA
© 2017 IXYS CORPORATION, All Rights Reserved
DS98809E(6/17)
IXTY01N100D IXTU01N100D
IXTP01N100D
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
V
GS
=
5V,
V
DS
= 500V, I
D
= 50mA
Resistive Switching Times
V
GS
=
5V,
V
DS
= 50V, I
D
= 50mA
R
G
= 30 (External)
V
GS
= -10V, V
DS
= 25V, f = 1MHz
V
DS
= 100V, I
D
= 100mA, Note 1
Characteristic Values
Min.
Typ.
Max.
100
200
100
12
2
7
10
34
64
5.8
3.6
0.4
0.50
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
5.0
C/W
C/W
A
A1
A2
b
b1
b2
c
c1
Dim.
Millimeter
Min. Max.
2.19
0.89
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
Inches
Min.
Max.
0.086
0.035
0
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
1. Gate
2. Drain
3. Source
TO-252 AA (IXTY) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
V
SD
t
rr
I
F
= 100mA, V
GS
= -10V, Note 1
I
F
= 750mA, -di/dt = 100A/s
V
R
= 25V, V
GS
= -10V
Characteristic Values
Min.
Typ.
Max.
1.5
1.5
V
μs
D
D1
E
E1
e
e1
H
L
L1
L2
L3
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64
0.89
2.54
1.02
1.27
2.92
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
0.410
0.040
0.040
0.050
0.115
TO-220 (IXTP) Outline
Note 1. Pulse test, t
300s, duty cycle, d
2%.
TO-251 (IXTU) Outline
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
1. Gate
3. Source
2,4 .Drain
Millimeter
Min.
Max.
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
6.35
2.28
4.57
17.02
8.89
1.91
0.89
2.38
1.14
0.89
1.14
5.46
0.58
0.58
6.22
6.73
BSC
BSC
17.78
9.65
2.28
1.27
Inches
Min. Max.
.086
0.35
.025
.030
.205
.018
.018
.235
.250
.090
.180
.670
.350
.075
.035
.094
.045
.035
.045
.215
.023
.023
.245
.265
BSC
BSC
.700
.380
.090
.050
Pins:
1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY01N100D IXTU01N100D
IXTP01N100D
Fig. 1. Output Characteristics @ T
J
= 25 C
100
90
80
V
GS
= 5.0V
0V
- 0.5V
100
90
80
o
Fig. 2. Output Characteristics @ T
J
= 125 C
V
GS
= 5.0V
0V
- 0.5V
o
I
D
- MilliAmperes
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
I
D
- MilliAmperes
70
60
-1.0V
50
40
30
20
-1.5V
-1.0V
-1.5V
- 2.0V
- 3.0V
4.5
5
10
0
0
1
2
3
4
5
6
7
8
9
- 2.0V
- 3.0V
10
11
V
DS
- Volts
V
DS
- Volts
o
o
Fig. 3. Drain Current @ T
J
= 25 C
1.E+01
1.E+01
Fig. 4. Drain Current @ T
J
= 100 C
1.E+00
1.E+00
V
GS
= 0V
-0.5V
-1.0V
-1.5V
-2.0V
V
GS
= 0V
-0.5V
-1.0V
1.E-01
1.E-01
- 1.5V
- 2.0V
I
D
- Amperes
I
D
- Amperes
1.E-02
1.E-02
- 2.5V
- 3.0V
- 2.5V
1.E-03
1.E-03
1.E-04
- 3.0V
1.E-04
- 3.5V
1.E-05
1.E-05
- 3.5V
1.E-06
1.E-06
- 4.0V
1.E-07
1.E-07
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
450
V
DS
- Volts
V
DS
- Volts
Fig. 5. Dynamic Resistance vs. Gate Voltage
1.E+09
Fig. 6. Normalized R
DS(on)
vs. Junction Temperature
2.4
2.2
2.0
V
GS
= 0V
I
D
= 50mA
∆
V
DS
= 300V - 100V
1.E+08
1.E+07
R
O
- Ohms
T
J
= 25 C
T
J
= 100 C
1.E+06
o
o
R
DS(on)
- Normalized
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.E+05
1.E+04
1.E+03
0.4
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-50
-25
0
25
50
75
100
125
150
-4.0
V
GS
- Volts
T
J
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY01N100D IXTU01N100D
IXTP01N100D
5
Fig. 7. R
DS(on)
Normalized to I
D
= 50mA Value
vs. Drain Current
V
GS
= 0V
5V
Fig. 8. Input Admittance
250
V
DS
= 100V
200
4
R
DS(on)
- Normalized
I
D
- MilliAmperes
3
T
J
= 125 C
2
o
150
T
J
= 125 C
25 C
- 40 C
o
o
o
100
1
T
J
= 25 C
0
0
100
200
300
400
500
600
700
800
900
1000
o
50
0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
I
D
- MilliAmperes
V
GS
- Volts
Fig. 9. Transconductance
350
V
DS
= 100V
300
250
200
150
100
50
0
0
50
100
150
200
250
T
J
= - 40 C
o
Fig. 10. Forward Voltage Drop of Intrinsic Diode
300
25 C
125 C
o
o
V
GS
= -10V
250
g
f s
- MilliSiemens
I
S
- MilliAmperes
200
150
T
J
= 125 C
100
o
T
J
= 25 C
o
50
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
D
- MilliAmperes
V
SD
- Volts
1,000
Fig. 11. Capacitance
f
= 1 MHz
5
4
3
V
DS
= 500V
I
D
= 50mA
I
G
= 1mA
Fig. 12. Gate Charge
Capacitance - PicoFarads
100
Ciss
2
V
GS
- Volts
1
0
-1
-2
-3
Coss
10
Crss
1
0
5
10
15
20
25
30
35
40
-4
-5
0
1
2
3
4
5
6
V
DS
- Volts
Q
G
- NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY01N100D IXTU01N100D
IXTP01N100D
Fig. 13. Forward-Bias Safe Operating Area
1
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75
o
C
1
@ T
C
= 25 C
o
R
DS(on)
Limit
250μs
R
DS(on)
Limit
I
D
- Amperes
1ms
0.1
I
D
- Amperes
250μs
0.1
1ms
10ms
T
J
= 150 C
T
C
= 25 C
Single Pulse
0.01
10
100
1,000
o
o
100ms
DC
T
J
= 150 C
T
C
= 75 C
Single Pulse
0.01
10
100
o
o
10ms
100ms
DC
1,000
V
DS
- Volts
V
DS
- Volts
Fig. 15. Maximum Transient Thermal Impedance
10
1
Z
(th)JC
- K / W
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_01N100D(F2)6-16-17-A
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IXTP01N100D Related Products

IXTP01N100D IXTU01N100D IXTY01N100D
Description Power Field-Effect Transistor, Power Field-Effect Transistor, Power Field-Effect Transistor,
Is it Rohs certified? conform to conform to conform to
Maker Littelfuse Littelfuse Littelfuse
Reach Compliance Code unknown unknown unknown
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 0.4 A 0.4 A 0.4 A
Maximum drain current (ID) 0.4 A 0.4 A 0.4 A
Maximum drain-source on-resistance 80 Ω 80 Ω 80 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-251 TO-252AA
JESD-30 code R-PSFM-T3 R-PSIP-T3 R-PSSO-G2
Number of components 1 1 1
Number of terminals 3 3 2
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 1.1 W 1.1 W 1.1 W
Maximum power dissipation(Abs) 25 W 25 W 25 W
Maximum pulsed drain current (IDM) 0.4 A 0.4 A 0.4 A
surface mount NO NO YES
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
package instruction TO-220, 3 PIN - SMALL OUTLINE, R-PSSO-G2

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