2SC5862B datasheet, PDF - EEWORLD Datasheet

2SC5862B: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size65KB，6 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SC5862B Overview

Transistor

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	100
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.13 W
surface mount	YES
Base Number Matches	1

2SC5862

Silicon NPN Epitaxial

ADE-208-1482 (Z)

Rev.0

Feb. 2002

Features

•

Low frequency amplifier

Outline

SMPAK

1. Emitter

2. Base

3. Collector

	2SC5862B	2SC5862	2SC5862D	2SC5862C
Description	Transistor	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SMPAK-3	Transistor	Transistor
Reach Compliance Code	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Configuration	Single	SINGLE	Single	Single
Minimum DC current gain (hFE)	100	100	250	160
Polarity/channel type	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES
Base Number Matches	1	1	1	1
Maximum operating temperature	150 °C	-	150 °C	150 °C
Maximum power dissipation(Abs)	0.13 W	-	0.13 W	0.13 W

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