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12F80

Description
Diode Switching 800V 12A 2-Pin DO-4
CategoryDiscrete semiconductor    diode   
File Size102KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

12F80 Overview

Diode Switching 800V 12A 2-Pin DO-4

12F80 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
package instructionO-MUPM-D1
Reach Compliance Codeunknown
Minimum breakdown voltage800 V
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.26 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current280 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage800 V
Maximum reverse current12000 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Jloaacti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
12F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200VV
RRM
12A
TypicalApplications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
F(AV)
12F(R)
12
@T
C
144
Units
A
°C
A
A
A
A
2
S
A
2
s
V
"C
f (RMS)
FSM
19
@50Hz
@60Hz
265
280
351
320
•I
2
t
@50Hz
@ 60Hz
V
RRM
range
range
10010
1200
- 6 5 to 175
L
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