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FRL9130R2

Description
5A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size142KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

FRL9130R2 Overview

5A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

FRL9130R2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power consumption environment25 W
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)15 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)204 ns
Maximum opening time (tons)180 ns
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