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2SC4116-GR(T5LPP,F

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size382KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC4116-GR(T5LPP,F Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

2SC4116-GR(T5LPP,F Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresLOW NOISE
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SC4116
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4116
Audio Frequency General Purpose Amplifier Applications
AEC-Q101 Qualified (Note1)
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max)
High h
FE
:
h
FE
= 70 to 700
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Unit: mm
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1586
Small package
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
100
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.006 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
NF
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
6 V, I
C
=
0.1 mA, f
=
1 kHz,
R
g
=
10 kΩ,
Min
70
80
Typ.
0.1
2.0
1.0
Max
0.1
0.1
700
0.25
3.5
10
V
MHz
pF
dB
Unit
μA
μA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
FE
classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
Marking
Start of commercial production
1987-01
1
2015-01-09

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