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GBU8B

Description
8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size165KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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GBU8B Overview

8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBU8A thru GBU8M SERIES
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -8.0 Amperes
FEATURES
Surge overload rating-175 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
Flammability classification 94V-O
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU8A
GBU8B
100
70
100
GBU8D
200
140
200
GBU8G
400
280
400
8.0
3.2
GBU8J
600
420
600
GBU8K
800
560
800
GBU8M
1000
700
1000
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @
TC=100 C
(without heatsink)
0
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load(JEDEC Method)
Maximum DC Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance per element(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
R
@ TA=25
0
C
@ TA=125 C
0
I
FSM
200
A
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
1.0
5.0
500
166
60
2.2
0
V
A
AS
PF
2
C/W
0
-55 to +150
-55 to +150
C
C
0
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 100mm x 100mm X 1.6mm Cu Plate Heatsink.

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