GBU8A thru GBU8M SERIES
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -8.0 Amperes
FEATURES
Surge overload rating-175 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
Flammability classification 94V-O
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU8A
GBU8B
100
70
100
GBU8D
200
140
200
GBU8G
400
280
400
8.0
3.2
GBU8J
600
420
600
GBU8K
800
560
800
GBU8M
1000
700
1000
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @
TC=100 C
(without heatsink)
0
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load(JEDEC Method)
Maximum DC Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance per element(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
R
@ TA=25
0
C
@ TA=125 C
0
I
FSM
200
A
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
1.0
5.0
500
166
60
2.2
0
V
A
AS
PF
2
C/W
0
-55 to +150
-55 to +150
C
C
0
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 100mm x 100mm X 1.6mm Cu Plate Heatsink.
GBU8A thru GBU8M SERIES
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
RATING AND CHARACTERISTICS CURVES
GBU8A THRU GBU8M
FIG. 2
-
MAXIMUM NON-REPETITIVE
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
CHENG- YI
ELECTRONIC
FIG. 1
-
FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
10.0
WITH HEATSINK
8.0
6.0
WITHOUT HEATSINK
170
150
4.0
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
100
50
Single Half Sine-Wave
(JEDEC METHOD)
0.0
0
20
40
60
80
100
0
0
1
2
5
10
20
50
100
120
140
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
1000
100
FIG. 4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
CAPACITANCE, (pF)
100
10
10
1.0
0
TJ=25C, f= 1MHz
0
TJ=25C
PULSE WIDTH:300
S
1.0
1.0
4.0
10.0
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE, VOLTS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG. 5
-
TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT, (
A)
0
TJ=125C
100
0
TJ=100C
10
TJ=50
0
C
1.0
TJ=25
0
C
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
Microcontroller MCU
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