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AS7C332MFT18A-85TQCN

Description
3.3V 2M x 18 Flow-through synchronous SRAM
Categorystorage    storage   
File Size495KB,19 Pages
ManufacturerALSC [Alliance Semiconductor Corporation]
Environmental Compliance
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AS7C332MFT18A-85TQCN Overview

3.3V 2M x 18 Flow-through synchronous SRAM

AS7C332MFT18A-85TQCN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerALSC [Alliance Semiconductor Corporation]
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time8.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density37748736 bi
Memory IC TypeSTANDARD SRAM
memory width18
Number of functions1
Number of terminals100
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.1 A
Minimum standby current3.14 V
Maximum slew rate0.27 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width14 mm
December 2004
®
AS7C332MFT18A
3.3V 2M
×
18 Flow-through synchronous SRAM
Features
Organization: 2,097152 words × 18 bits
Fast clock to data access: 7.5/8.5/10 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous flow-through operation
Asynchronous output enable control
Available in 100-pin TQFP package
Individual byte write and global write
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate V
DDQ
Linear or interleaved burst control
Snooze mode for reduced power-standby
Common data inputs and data outputs
Logic block diagram
LBO
CLK
ADV
ADSC
ADSP
A[20:0]
CLK
CS
CLR
Burst logic
Q
21
CS
Address
D
21
19 21
2M x 18
Memory
array
18
18
register
CLK
GWE
BW
b
BWE
BW
a
CE0
CE1
CE2
D
DQb
Q
CLK
D
DQa
Q
Byte Write
registers
Byte Write
CLK
D
registers
Enable
register
2
OE
Q
CE
CLK
ZZ
Output
registers
CLK
Input
registers
CLK
Power
down
D
Enable
Q
delay
register
CLK
OE
18
DQ[a,b]
Selection guide
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
-75
8.5
7.5
325
140
90
-85
10
8.5
300
130
90
-10
12
10
275
130
90
Units
ns
ns
mA
mA
mA
12/23/04, v 1.3
Alliance Semiconductor
1 of 19
Copyright © Alliance Semiconductor. All rights reserved.

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Description 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM 3.3V 2M x 18 Flow-through synchronous SRAM
Is it Rohs certified? conform to - incompatible conform to incompatible conform to incompatible conform to incompatible incompatible
Maker ALSC [Alliance Semiconductor Corporation] - ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation] ALSC [Alliance Semiconductor Corporation]
Parts packaging code QFP - QFP QFP QFP QFP QFP QFP QFP QFP
package instruction LQFP, QFP100,.63X.87 - LQFP, LQFP, LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87
Contacts 100 - 100 100 100 100 100 100 100 100
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow unknow unknow
ECCN code 3A991.B.2.A - 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 8.5 ns - 10 ns 10 ns 7.5 ns 7.5 ns 7.5 ns 7.5 ns 8.5 ns 8.5 ns
Other features FLOW-THROUGH ARCHITECTURE - FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK) 100 MHz - - - 117.64 MHz 117.64 MHz 117.64 MHz 117.64 MHz 100 MHz 100 MHz
I/O type COMMON - - - COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PQFP-G100 - R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e3 - e0 e3 e0 e3 e0 e3 e0 e0
length 20 mm - 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
memory density 37748736 bi - 37748736 bi 37748736 bi 37748736 bi 37748736 bi 37748736 bi 37748736 bi 37748736 bi 37748736 bi
Memory IC Type STANDARD SRAM - STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 18 - 18 18 18 18 18 18 18 18
Number of functions 1 - 1 1 1 1 1 1 1 1
Number of terminals 100 - 100 100 100 100 100 100 100 100
word count 2097152 words - 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 - 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C - 85 °C 85 °C 70 °C 70 °C 85 °C 85 °C 70 °C 85 °C
organize 2MX18 - 2MX18 2MX18 2MX18 2MX18 2MX18 2MX18 2MX18 2MX18
Output characteristics 3-STATE - - - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP - LQFP LQFP LQFP LQFP LQFP LQFP LQFP LQFP
Encapsulate equivalent code QFP100,.63X.87 - - - QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE - FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 245 - NOT SPECIFIED 245 NOT SPECIFIED 245 NOT SPECIFIED 245 NOT SPECIFIED NOT SPECIFIED
power supply 2.5/3.3,3.3 V - - - 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.6 mm - 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
Maximum standby current 0.1 A - - - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Minimum standby current 3.14 V - - - 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
Maximum slew rate 0.27 mA - - - 0.29 mA 0.29 mA 0.29 mA 0.29 mA 0.27 mA 0.27 mA
Maximum supply voltage (Vsup) 3.465 V - 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
Minimum supply voltage (Vsup) 3.135 V - 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES - YES YES YES YES YES YES YES YES
technology CMOS - CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL - INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal surface MATTE TIN - TIN LEAD MATTE TIN Tin/Lead (Sn/Pb) MATTE TIN Tin/Lead (Sn/Pb) MATTE TIN Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm - 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location QUAD - QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature 30 - NOT SPECIFIED 30 NOT SPECIFIED 30 NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED
width 14 mm - 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
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