TRIAC
(Through Hole / Isolated)
TMG3C60F
Triac
TMG3C60F
is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
10.5±0.3
3.2±0.3
4.7±0.2
2.7±0.2
TO-220F
Typical Applications
Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro
Wave Ovens, Hair Dryers, other control applications
●
Industrial Use
: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications
●
1
16.0±0.3
φ3.2
±0
.2
3
9.7±0.3
2.6±0.2
0.60±0.15
13.0±0.5
3.0±0.3
1.1±0.2
1.4±0.2
2
1 T1
2 T2
3 Gate
Features
0.6±0.15
I
T(RMS)
=3A
●
High Surge Current
●
Low Voltage Drop
●
Lead-Free Package
●
1
2
3
2.54±0.25
5.08±0.5
Identifying Code:T3C6F
Unit:
mm
■Maximum
Ratings
Symbol
V
DRM
(
I
T RMS)
I
TSM
I
2
t
P
GM
(AV)
P
G
I
GM
V
GM
V
ISO
Tj
Tstg
Item
Repetitive Peak Off-State Voltage
R.M.S. On-State Current
Surge On-State Current
I
2
t(for fusing)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
Reference
(Tj=25℃
unless otherwise specified)
Tc=107℃
One cycle, 50Hz/60Hz, Peak value non-repetitive
A.C. 1minute
Ratings
600
3
27/30
3.7
1.5
0.1
1
7
1500
−40∼+125
−40∼+150
2
Unit
V
A
A
A
2
S
W
W
A
V
V
℃
℃
g
■Electrical
Characteristics
Symbol
I
DRM
V
TM
+
I
GT1
−
I
GT1
+
I
GT3
−
I
GT3
+
V
GT1
−
V
GT1
+
V
GT3
−
V
GT3
V
GD
〔dv
/
dt〕
c
Item
Repetitive Peak Off-State Current
Peak On-State Voltage
1
2
Gate Trigger Current
3
4
1
2
Gate Trigger Voltage
3
4
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Reference
V
D
=V
DRM
, Single phase, half wave, Tj=125℃
I
T
=4.5A,
Inst. measurement
V
D
=6V,R
L
=10Ω
Tj=125℃,V
D
=
1 2
V
DRM
/
Tj=125℃,
/
dt〕
〔di
c=−1.5A
/
ms,V
D
=
2 3
V
DRM
/
Junction to case
Ratings
Min. Typ. Max.
1
1.4
15
15
―
15
1.5
1.5
―
1.5
0.2
5
2
5
Unit
mA
V
mA
V
V
V
/
μs
mA
℃
/
W
I
H
Holding Current
Rth j-c) Thermal Resistance
(
Trigger mode of the triac
Mode
1
I
(
+
)
Mode
2
I
)
(
−
Mode
3 III
(
+
)
Mode
4 III )
(
−
TMG3C60F
1
0
Gate Characteristics
Peak Gate Voltage V)
(7
Pe
10
0
ak
Ga
te
Po
we
(
r1
.
On-State Characteristics MAX)
(
T
j
= 2 ℃
5
15
T
j
= 2 ℃
5W
)
On-State Current A)
(
Gate Voltage
(V)
1
25℃
1
+
GT1
1
−
GT1
1
−
GT3
Peak Gate Current A)
(1
Non-Trigger Gate Voltage (0.2V)
e
ag
er
Av
G
e
at
w
Po
W
1
.
r0
e(
)
1
0
1
01
.
1
1
0
10
0
10
00
01
.
0
05
.
1
15
.
2
25
.
3
3.
5
Gate Current mA)
(
On-State Voltage
(V)
3.
5
Power Dissipation
(W)
0
π
θ
2π
θ1 0
=8゜
θ1 0
=5゜
θ1 0
=2゜
θ9 ゜
=0
θ6 ゜
=0
θ3 ゜
=0
3
25
.
2
15
.
1
05
.
θ
30
6゜
θ Conduction Angle
:
Allowable Case Temperature
(℃)
4
RMS On-State Current vs
Maximum Power Dissipation
RMS On-State vs
Allowable Case Temperature
15
2
10
2
θ3 ゜
=0
θ6 ゜
=0
π
θ
2π
15
1
θ9 ゜
=0
θ1 0
=2゜
θ1 0
=5゜
θ1 0
=8゜
10
1
0
θ
30
6゜
θ Conduction Angle
:
0
0
05
.
1
15
.
2
25
.
3
15
0
0
05
.
1
15
.
2
25
.
3
RMS On-State Current A)
(
RMS On-State Current A)
(
Transient Thermal Impedance
(℃/W)
3
5
Surge On-State Current Rating
(Non-Repetitive)
1
0
Transient Thermal Impedance
Surge On-State Current A)
(
3
0
2
5
2
0
6 H
Z
0
1
5
5 H
Z
0
1
0
5
0
1
1
0
10
0
1
00
.1
01
.
1
1
0
10
0
Time
(Cycles)
Time
(Sec.)
10
00
I
GT
−Tj
(Typical)
10
00
V
GT
−Tj
(Typical)
I
GT
(t℃)
×100
(%)
I
GT
2 ℃)
( 5
V
GT
(t℃)
×100
(%)
V
GT
2 ℃)
( 5
10
0
I
GT1
1
)
(
I
−
GT1
1
−
)
(
I
−
GT3
3
−
)
(
+
+
10
0
I
+
GT1
1
+
)
(
I
−
GT1
1
−
)
(
I
−
GT3
3
−
)
(
1
0
−0
5
−5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
1
0
−0
5
−5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
Junction Temp.Tj
(℃)
Junction Temp.Tj
(℃)