AT68166FT_09 datasheet, PDF - EEWORLD Datasheet

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AT68166FT_09: DescriptionRad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module; File Size361KB，19 Pages; ManufacturerAtmel (Microchip)

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AT68166FT_09 Overview

Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module

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Features

•

16 Mbit SRAM Multi Chip Module

Allows 32-, 16- or 8-bit access configuration

Operating Voltage: 3.3V

0.3V, 5V Tolerant

Access Time:

– 25 ns, 20 ns

– 18 ns (preliminary information)

Very Low Power Consumption

– Active: 595 mW per byte (Max) @ 20 ns

(1)

, 415mW per byte (Max) @ 50ns

(2)

– Standby: 15 mW (Typ)

Military Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Die manufactured on Atmel 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

ESD Better than 2000V

Quality Grades:

– QML-Q or V with SMD 5962-06229

– ESCC

950 Mils Wide MQFP 68 Package

Mass : 8.5 grams

1. For AT68166FT-20 only. 540mW for AT68166FT-25.

2. For AT68166FT-20 only. 450mW for AT68166FT-25.

Rad Hard

16 MegaBit 3.3V

5V Tolerant

SRAM Multi-

Chip Module

AT68166FT

Notes:

Description

The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM)

for space applications.

The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-

nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It

combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit

Upset immunity and a total dose tolerance of 300Krads, with a fast access time.

The MCM packaging technology allows a reduction of the PCB area by 50% with a

weight savings of 75% compared to four 4Mbit packages.

Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-

date the assembly of the four dice on one side of the package which facilitates the

power dissipation.

The compatibility with other products allows designers to easily migrate to the Atmel

AT68166FT memory.

The AT68166FT is powered at 3.3V and is 5V tolerant.

The AT68166FT is processed according to the test methods of the latest revision of

the MIL-PRF-38535 or the ESCC 9000.

7531H–AERO–04/09

AT68166FT_09 Related Products

	AT68166FT_09	AT68166FT-YM25-SCC	AT68166FT-YS18-MQ	AT68166FT-YS20-SCC	AT68166FT-YS18-E	AT68166FT-YS18-SCC	AT68166FT-YS20-E
Description	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	-	Contains lead	-
Is it Rohs certified?	-	incompatible	incompatible	incompatible	-	incompatible	-
Maker	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Parts packaging code	-	QFP	QFP	QFP	QFP	QFP	QFP
package instruction	-	QFF, TPAK68,2.5SQ	QFF, TPAK68,2.5SQ	QFF, TPAK68,2.5SQ	QFF,	QFF, TPAK68,2.5SQ	QFF,
Contacts	-	68	68	68	68	68	68
Reach Compliance Code	-	compli	compli	compli	unknow	compli	unknow
ECCN code	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	-	25 ns	18 ns	20 ns	18 ns	18 ns	20 ns
Other features	-	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
I/O type	-	COMMON	COMMON	COMMON	-	COMMON	-
JESD-30 code	-	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68
length	-	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm
memory density	-	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi
Memory IC Type	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	-	32	32	32	32	32	32
Humidity sensitivity level	-	1	1	1	-	1	-
Number of functions	-	1	1	1	1	1	1
Number of terminals	-	68	68	68	68	68	68
word count	-	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	-	512000	512000	512000	512000	512000	512000
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	-	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32
Output characteristics	-	3-STATE	3-STATE	3-STATE	-	3-STATE	-
Package body material	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	-	QFF	QFF	QFF	QFF	QFF	QFF
Encapsulate equivalent code	-	TPAK68,2.5SQ	TPAK68,2.5SQ	TPAK68,2.5SQ	-	TPAK68,2.5SQ	-
Package shape	-	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	-	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	-	225	225	225	-	225	-
power supply	-	3.3 V	3.3 V	3.3 V	-	3.3 V	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	-	ESCC9000	MIL-STD-883 Class Q	ESCC9000	-	ESCC9000	-
Maximum seat height	-	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm
Maximum standby current	-	0.006 A	0.005 A	0.0045 A	-	0.005 A	-
Minimum standby current	-	2 V	2 V	2 V	-	2 V	-
Maximum slew rate	-	0.15 mA	0.17 mA	0.165 mA	-	0.17 mA	-
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	-	YES	YES	YES	YES	YES	YES
technology	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	-	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	-	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal pitch	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	-	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	-	30	30	30	-	30	-
width	-	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm

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