AT68166FT-YS18-MQ datasheet, PDF

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AT68166FT-YS18-MQ: DescriptionRad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module; Categorystorage storage; File Size361KB，19 Pages; ManufacturerAtmel (Microchip)

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AT68166FT-YS18-MQ Overview

Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module

AT68166FT-YS18-MQ Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	QFP
package instruction	QFF, TPAK68,2.5SQ
Contacts	68
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	18 ns
Other features	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
I/O type	COMMON
JESD-30 code	S-CQFP-F68
length	24.14 mm
memory density	16777216 bi
Memory IC Type	STANDARD SRAM
memory width	32
Humidity sensitivity level	1
Number of functions	1
Number of terminals	68
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX32
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFF
Encapsulate equivalent code	TPAK68,2.5SQ
Package shape	SQUARE
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class Q
Maximum seat height	4.7 mm
Maximum standby current	0.005 A
Minimum standby current	2 V
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	24.14 mm

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Features

•

16 Mbit SRAM Multi Chip Module

Allows 32-, 16- or 8-bit access configuration

Operating Voltage: 3.3V

0.3V, 5V Tolerant

Access Time:

– 25 ns, 20 ns

– 18 ns (preliminary information)

Very Low Power Consumption

– Active: 595 mW per byte (Max) @ 20 ns

(1)

, 415mW per byte (Max) @ 50ns

(2)

– Standby: 15 mW (Typ)

Military Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Die manufactured on Atmel 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

ESD Better than 2000V

Quality Grades:

– QML-Q or V with SMD 5962-06229

– ESCC

950 Mils Wide MQFP 68 Package

Mass : 8.5 grams

1. For AT68166FT-20 only. 540mW for AT68166FT-25.

2. For AT68166FT-20 only. 450mW for AT68166FT-25.

Rad Hard

16 MegaBit 3.3V

5V Tolerant

SRAM Multi-

Chip Module

AT68166FT

Notes:

Description

The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM)

for space applications.

The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-

nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It

combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit

Upset immunity and a total dose tolerance of 300Krads, with a fast access time.

The MCM packaging technology allows a reduction of the PCB area by 50% with a

weight savings of 75% compared to four 4Mbit packages.

Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-

date the assembly of the four dice on one side of the package which facilitates the

power dissipation.

The compatibility with other products allows designers to easily migrate to the Atmel

AT68166FT memory.

The AT68166FT is powered at 3.3V and is 5V tolerant.

The AT68166FT is processed according to the test methods of the latest revision of

the MIL-PRF-38535 or the ESCC 9000.

7531H–AERO–04/09

AT68166FT-YS18-MQ Related Products

	AT68166FT-YS18-MQ	AT68166FT-YM25-SCC	AT68166FT-YS20-SCC	AT68166FT_09	AT68166FT-YS18-E	AT68166FT-YS18-SCC	AT68166FT-YS20-E
Description	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	-	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	incompatible	-	-	incompatible	-
Maker	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Parts packaging code	QFP	QFP	QFP	-	QFP	QFP	QFP
package instruction	QFF, TPAK68,2.5SQ	QFF, TPAK68,2.5SQ	QFF, TPAK68,2.5SQ	-	QFF,	QFF, TPAK68,2.5SQ	QFF,
Contacts	68	68	68	-	68	68	68
Reach Compliance Code	compli	compli	compli	-	unknow	compli	unknow
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	18 ns	25 ns	20 ns	-	18 ns	18 ns	20 ns
Other features	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	-	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
I/O type	COMMON	COMMON	COMMON	-	-	COMMON	-
JESD-30 code	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	-	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68
length	24.14 mm	24.14 mm	24.14 mm	-	24.14 mm	24.14 mm	24.14 mm
memory density	16777216 bi	16777216 bi	16777216 bi	-	16777216 bi	16777216 bi	16777216 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	32	32	32	-	32	32	32
Humidity sensitivity level	1	1	1	-	-	1	-
Number of functions	1	1	1	-	1	1	1
Number of terminals	68	68	68	-	68	68	68
word count	524288 words	524288 words	524288 words	-	524288 words	524288 words	524288 words
character code	512000	512000	512000	-	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	-	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C
organize	512KX32	512KX32	512KX32	-	512KX32	512KX32	512KX32
Output characteristics	3-STATE	3-STATE	3-STATE	-	-	3-STATE	-
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFF	QFF	QFF	-	QFF	QFF	QFF
Encapsulate equivalent code	TPAK68,2.5SQ	TPAK68,2.5SQ	TPAK68,2.5SQ	-	-	TPAK68,2.5SQ	-
Package shape	SQUARE	SQUARE	SQUARE	-	SQUARE	SQUARE	SQUARE
Package form	FLATPACK	FLATPACK	FLATPACK	-	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	-	-	225	-
power supply	3.3 V	3.3 V	3.3 V	-	-	3.3 V	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-STD-883 Class Q	ESCC9000	ESCC9000	-	-	ESCC9000	-
Maximum seat height	4.7 mm	4.7 mm	4.7 mm	-	4.7 mm	4.7 mm	4.7 mm
Maximum standby current	0.005 A	0.006 A	0.0045 A	-	-	0.005 A	-
Minimum standby current	2 V	2 V	2 V	-	-	2 V	-
Maximum slew rate	0.17 mA	0.15 mA	0.165 mA	-	-	0.17 mA	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	-	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	-	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	-	YES	YES	YES
technology	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	-	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	FLAT	-	FLAT	FLAT	FLAT
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	-	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	30	30	30	-	-	30	-
width	24.14 mm	24.14 mm	24.14 mm	-	24.14 mm	24.14 mm	24.14 mm

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