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AT68166FT-YS18-E

Description
Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
Categorystorage    storage   
File Size361KB,19 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

AT68166FT-YS18-E Overview

Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module

AT68166FT-YS18-E Parametric

Parameter NameAttribute value
MakerAtmel (Microchip)
Parts packaging codeQFP
package instructionQFF,
Contacts68
Reach Compliance Codeunknow
ECCN code3A001.A.2.C
Maximum access time18 ns
Other featuresIT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 codeS-CQFP-F68
length24.14 mm
memory density16777216 bi
Memory IC TypeSTANDARD SRAM
memory width32
Number of functions1
Number of terminals68
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX32
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQFF
Package shapeSQUARE
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height4.7 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationQUAD
width24.14 mm
Features
16 Mbit SRAM Multi Chip Module
Allows 32-, 16- or 8-bit access configuration
Operating Voltage: 3.3V
+
0.3V, 5V Tolerant
Access Time:
– 25 ns, 20 ns
– 18 ns (preliminary information)
Very Low Power Consumption
– Active: 595 mW per byte (Max) @ 20 ns
(1)
, 415mW per byte (Max) @ 50ns
(2)
– Standby: 15 mW (Typ)
Military Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Die manufactured on Atmel 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
ESD Better than 2000V
Quality Grades:
– QML-Q or V with SMD 5962-06229
– ESCC
950 Mils Wide MQFP 68 Package
Mass : 8.5 grams
1. For AT68166FT-20 only. 540mW for AT68166FT-25.
2. For AT68166FT-20 only. 450mW for AT68166FT-25.
Rad Hard
16 MegaBit 3.3V
5V Tolerant
SRAM Multi-
Chip Module
AT68166FT
Notes:
Description
The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM)
for space applications.
The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-
nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It
combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit
Upset immunity and a total dose tolerance of 300Krads, with a fast access time.
The MCM packaging technology allows a reduction of the PCB area by 50% with a
weight savings of 75% compared to four 4Mbit packages.
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-
date the assembly of the four dice on one side of the package which facilitates the
power dissipation.
The compatibility with other products allows designers to easily migrate to the Atmel
AT68166FT memory.
The AT68166FT is powered at 3.3V and is 5V tolerant.
The AT68166FT is processed according to the test methods of the latest revision of
the MIL-PRF-38535 or the ESCC 9000.
7531H–AERO–04/09

AT68166FT-YS18-E Related Products

AT68166FT-YS18-E AT68166FT-YM25-SCC AT68166FT-YS18-MQ AT68166FT-YS20-SCC AT68166FT_09 AT68166FT-YS18-SCC AT68166FT-YS20-E
Description Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
Maker Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) - Atmel (Microchip) Atmel (Microchip)
Parts packaging code QFP QFP QFP QFP - QFP QFP
package instruction QFF, QFF, TPAK68,2.5SQ QFF, TPAK68,2.5SQ QFF, TPAK68,2.5SQ - QFF, TPAK68,2.5SQ QFF,
Contacts 68 68 68 68 - 68 68
Reach Compliance Code unknow compli compli compli - compli unknow
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C - 3A001.A.2.C 3A001.A.2.C
Maximum access time 18 ns 25 ns 18 ns 20 ns - 18 ns 20 ns
Other features IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO - IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 code S-CQFP-F68 S-CQFP-F68 S-CQFP-F68 S-CQFP-F68 - S-CQFP-F68 S-CQFP-F68
length 24.14 mm 24.14 mm 24.14 mm 24.14 mm - 24.14 mm 24.14 mm
memory density 16777216 bi 16777216 bi 16777216 bi 16777216 bi - 16777216 bi 16777216 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM - STANDARD SRAM STANDARD SRAM
memory width 32 32 32 32 - 32 32
Number of functions 1 1 1 1 - 1 1
Number of terminals 68 68 68 68 - 68 68
word count 524288 words 524288 words 524288 words 524288 words - 524288 words 524288 words
character code 512000 512000 512000 512000 - 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C - 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C - -55 °C -55 °C
organize 512KX32 512KX32 512KX32 512KX32 - 512KX32 512KX32
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code QFF QFF QFF QFF - QFF QFF
Package shape SQUARE SQUARE SQUARE SQUARE - SQUARE SQUARE
Package form FLATPACK FLATPACK FLATPACK FLATPACK - FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
Maximum seat height 4.7 mm 4.7 mm 4.7 mm 4.7 mm - 4.7 mm 4.7 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V - 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V
surface mount YES YES YES YES - YES YES
technology CMOS CMOS CMOS CMOS - CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY - MILITARY MILITARY
Terminal form FLAT FLAT FLAT FLAT - FLAT FLAT
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm - 1.27 mm 1.27 mm
Terminal location QUAD QUAD QUAD QUAD - QUAD QUAD
width 24.14 mm 24.14 mm 24.14 mm 24.14 mm - 24.14 mm 24.14 mm
Is it lead-free? - Contains lead Contains lead Contains lead - Contains lead -
Is it Rohs certified? - incompatible incompatible incompatible - incompatible -
I/O type - COMMON COMMON COMMON - COMMON -
Humidity sensitivity level - 1 1 1 - 1 -
Output characteristics - 3-STATE 3-STATE 3-STATE - 3-STATE -
Encapsulate equivalent code - TPAK68,2.5SQ TPAK68,2.5SQ TPAK68,2.5SQ - TPAK68,2.5SQ -
Peak Reflow Temperature (Celsius) - 225 225 225 - 225 -
power supply - 3.3 V 3.3 V 3.3 V - 3.3 V -
Filter level - ESCC9000 MIL-STD-883 Class Q ESCC9000 - ESCC9000 -
Maximum standby current - 0.006 A 0.005 A 0.0045 A - 0.005 A -
Minimum standby current - 2 V 2 V 2 V - 2 V -
Maximum slew rate - 0.15 mA 0.17 mA 0.165 mA - 0.17 mA -
Maximum time at peak reflow temperature - 30 30 30 - 30 -

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