Green
DMNH10H028SPS
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
V
(BR)DSS
100V
R
DS(ON)
28mΩ @ V
GS
= 10V
I
D
T
C
= +25°C
40A
Features
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low R
DS(ON)
– Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH10H028SPSQ)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Power Management Functions
DC-DC Converters
POWERDI
®
5060-8
Mechanical Data
Case: POWERDI
®
5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D
Pin1
S
S
S
D
D
D
D
G
G
S
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMNH10H028SPS-13
Notes:
Case
POWERDI
®
5060-8
Packaging
2500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
H1H28SS
YYWW
=Manufacturer’s Marking
H1H28SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
S
S
S
G
POWERDI is a registered trademark of Diodes Incorporated.
DMNH10H028SPS
Document number: DS38047 Rev. 2 - 2
1 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMNH10H028SPS
Maximum Ratings
(@T
C
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) (Note 5)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8) L=0.1mH
Avalanche Energy (Note 8) L=0.1mH
Continuous Drain Current, V
GS
= 10V
T
C
= +25°C
T
C
= +100°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
100
±20
40
25
54
3.9
26
35
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.6
97
2.9
52
1.8
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
C
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
100
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
2.5
19
0.7
2245
173
68
1.9
36
22
7.3
9.2
6.4
5.8
17.8
4.8
35
47
Max
—
1.0
±100
4.0
28
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
m
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 0V, I
S
= 1.0A
V
DS
= 50V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DD
= 50V, I
D
= 20A
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 6.0V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
pF
nC
ns
V
GS
= 10V, V
DS
= 50V,
R
G
= 3.0, I
D
= 20A
I
F
= 20A, di/dt = 100A/µs
I
F
= 20A, di/dt = 100A/µs
ns
nC
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMNH10H028SPS
Document number: DS38047 Rev. 2 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMNH10H028SPS
30.0
V
GS
=4.5V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
=5.0V
V
GS
=6.0V
I
D
, DRAIN CURRENT (A)
20.0
V
GS
=8.0V
V
GS
=10.0V
15.0
V
GS
=4.0V
20
25
30
V
DS
=5V
15
125℃
150℃
175℃
85℃
10.0
10
5.0
5
V
GS
=3.5V
0
0
1
2
3
4
5
2
25℃
-55℃
0.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.024
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
4
6
8
10
12
14
16
18
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150 175
V
GS
=10V, I
D
=10A
V
GS
=10V, I
D
=20A
I
D
=20A
0.022
0.02
V
GS
=10.0V
0.018
0.016
0.014
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS
=10V
0.05
175℃
150℃
0.04
125℃
85℃
25℃
-55℃
0.01
0.03
0.02
0
0
5
10
15
20
25
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.06
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
POWERDI is a registered trademark of Diodes Incorporated.
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMNH10H028SPS
Document number: DS38047 Rev. 2 - 2
3 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMNH10H028SPS
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
C
T
, JUNCTION CAPACITANCE (pF)
10000
f=1MHz
25
I
S
, SOURCE CURRENT (A)
V
GS
=0V,
T
A
=85℃
V
GS
=0V,
T
A
=125℃
V
GS
=0V,
T
A
=150℃
V
GS
=0V,
T
A
=175℃
C
iss
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D
=250µA
I
D
=1mA
V
GS
=10V, I
D
=20A
V
GS
=10V, I
D
=10A
20
1000
C
oss
C
rss
100
15
10
V
GS
=0V,
T
A
=25℃
V
GS
=0V,
T
A
=-55℃
0.6
0.9
1.2
5
0
0
0.3
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
10
0
10
20
30
40
50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
8
10
P
W
=1ms
P
W
=10ms
V
GS
(V)
6
1
4
V
DS
=50V, I
D
=20A
0.1
2
0
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 11. Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
0.01
T
J(Max)
=175℃
Tj,(Max)=175℃
T
C
=25℃
Tc=25℃
Single Pulse
DUT on 1*MRP
board
V
GS
=10V
0.1
1
P
W
=100ms
P
W
=1s
DC
10
100
1000
P
W
=10s
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMNH10H028SPS
Document number: DS38047 Rev. 2 - 2
4 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMNH10H028SPS
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.001
0.01
0.1
1
10
R
θJA
(t)=r(t) * R
θJA
R
θJA
=97°C/W
Duty Cycle, D=t1 / t2
100
1000
D=0.9
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
POWERDI is a registered trademark of Diodes Incorporated.
DMNH10H028SPS
Document number: DS38047 Rev. 2 - 2
5 of 7
www.diodes.com
December 2015
© Diodes Incorporated
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