2SK1758 datasheet, PDF - EEWORLD Datasheet

2SK1758: DescriptionPower Field-Effect Transistor, 2A I(D), 600V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size360KB，7 Pages; ManufacturerNEC Electronics

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2SK1758 Overview

Power Field-Effect Transistor, 2A I(D), 600V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	NEC Electronics
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	96 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	4.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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