DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2409
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2409 is N-Channel MOS Field Effect Transistor de-
signed for solenoid, motor, and lamp driver.
PACKAGE DIMENSION
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
FEATURES
•
Low On-Resistance
R
DS(on)
≤
27 mΩ (V
GS
= 10 V, I
D
= 20 A)
15.0 ±0.3
R
DS(on)
≤
40 mΩ (V
GS
= 4 V, I
D
= 20 A)
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Device”
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
2.54
0.7 ±0.1
4 ±0.2
13.5
MIN.
12.0 ±0.2
•
Low C
iss
C
iss
= 2040 pF TYP
.
•
Built-in Gate Protection Diode
3 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
*
60
±20
±40
±160
2.0
35
150
40
160
V
V
A
A
W
W
˚C
Gate
Drain
1 2 3
MP-45F (ISOLATED TO-220)
Total Power Dissipation (T
a
= 25 ˚C) P
T1
Total Power Dissipation (T
c
= 25 ˚C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
T
ch
T
stg
I
AS
**
E
AS
**
–55 to +150 ˚C
A
mJ
Body
Diode
Gate Protection
Diode
Source
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
The information in this document is subject to change without notice.
Document No. TC-2489
(O. D. No. TC-8028)
Date Published September 1994 P
Printed in Japan
©
1994
2SK2409
ELECTRICAL CHARACTERISTICS (T
a
= 25 ˚C)
CHARACTERISTIC
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Cutoff Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
R
DS(on)1
R
DS(on)2
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
2040
1080
300
30
350
210
260
72
6.0
24
1.1
110
360
1.0
20
MIN.
TYP.
22
30
1.5
35
10
±10
MAX.
27
40
2.0
UNIT
mΩ
mΩ
V
S
TEST CONDITIONS
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4 V, I
D
= 20 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 20 A
V
DS
= 60 V, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 20 A
V
GS(on)
= 10 V
V
DD
= 30 V
R
G
= 10
Ω
I
D
= 40 A
V
DD
= 48 V
V
GS
= 10 V
I
F
= 40 A, V
GS
= 0
I
F
= 40 A, V
GS
= 0
di/dt = 100 A/
µ
s
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
DUT
R
G
= 25
Ω
PG
V
GS
= 20
→
0 V
50
Ω
L
V
DD
PG.
DUT
R
L
R
G
R
G
= 10
Ω
V
DD
V
GS
Wave
Form
V
GS
0
I
D
10 %
V
GS(on)
90 %
90 %
90 %
10 %
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
t
t = 1
µ
s
Duty Cycle
≤
1%
I
D
Wave
Form
I
D
10 %
0
t
d (on)
t
on
t
r
t
d (off)
t
off
t
f
Starting T
ch
Test Circuit 3 Gate Charge
DUT
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
2SK2409
TYPICAL CHARACTERISTICS (T
a
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
100
P
T
- Total Power Dissipation - W
50
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
40
60
40
30
20
20
10
0
20
40
60
80
100 120
140 160
0
20
40
60
80
100 120
140 160
Tc - Case Temperature - ˚C
Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 10 V
=
s
FORWARD BIAS SAFE OPERATING AREA
1000
PW
d
ite V)
im 10
L =
n)
(o
S
DS
R t V
G
(a
I
D(DC)
Pulsed
I
D
- Drain Current - A
I
D(pulse)
I
D
- Drain Current - A
10
100
80
60
40
20
V
GS
= 6 V
µ
100
10
1
20
10
0
m
s
m
0
s
s
µ
V
GS
= 4 V
Po
w
10
er
Di
ss
DC
ip
a
tio
n
m
s
1
0.1
T
C
= 25 ˚C
Single Pulse
Li
m
ite
d
1
10
100
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
V
DS
=10 V
I
D
- Drain Current - A
100
10
T
a
= –25 ˚C
25 ˚C
125 ˚C
1
0
5
V
GS
- Gate to Source Voltage - V
10
3
2SK2409
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
Rth (ch-a) = 62.5 ˚C/W
100
10
1
Rth (ch-c) = 3.75 ˚C/W
0.1
0.01
Single Pulse
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R
DS (on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
I
yfs
I - Forward Transfer Admittance - S
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
V
DS
= 10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
Pulsed
50
40
30
I
D
= 20 A
20
10
100
10
1
1
10
I
D
- Drain Current - A
100
0
10
20
30
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
V
DS
= 10 V
I
D
= 1 mA
R
DS (on)
- Drain to Source On-State Resistance - mΩ
60
50
40
V
GS
= 4 V
30
V
GS
= 10 V
20
10
0
Pulsed
V
GS (off)
- Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.5
1.0
0.5
1
10
I
D
- Drain Current - A
100
0
–50
0
50
100
150
T
ch
- Channel Temperature - ˚C
4
2SK2409
R
DS (on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
I
SD
- Diode Forward Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
60
100
10 V
10
V
GS
= 0
40
V
GS
= 4 V
V
GS
= 10 V
20
I
D
= 20 A
0
–50
0
50
100
150
1
0
1.0
2.0
3.0
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
SD
- Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
d(off)
100
t
f
t
r
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0
f = 1 MHz
1000
C
oss
C
rss
100
C
iss
10
t
d(on)
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
Ω
100
10
1
10
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/
µ
s
V
GS
= 0
100
1.0
0.1
1.0
10
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
I
D
= 40 A
V
DD
= 48 V
16
V
GS
- Gate to Source Voltage - V
14
12
V
DS
40
V
GS
10
8
6
20
4
2
0
20
40
60
80
60
100
10
0.1
1.0
10
100
I
D
- Drain Current - A
Q
g
- Gate Change - nC
5
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