IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
Z0109NA0
4Q Triac
6 May 2015
Product data sheet
1. Features and benefits
•
•
•
•
•
•
•
Direct interfacing to logic level ICs
Enhanced current surge capability
Enhanced noise immunity
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate in four quadrants
Triggering in all four quadrants
2. Applications
•
•
•
•
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
3. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
lead
≤ 45 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
0.4
-
10
mA
0.4
-
10
mA
0.4
-
10
mA
0.4
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
12.5
1
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-92
NXP Semiconductors
Z0109NA0
4Q Triac
4. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
5. Ordering information
Table 3.
Ordering information
Package
Name
Z0109NA0
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
Z0109NA0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
2 / 13
NXP Semiconductors
Z0109NA0
4Q Triac
6. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
lead
≤ 45 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
1
12.5
13.8
0.78
50
50
20
50
1
2
0.1
150
125
003a a f977
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; SIN
I
G
= 20 mA; T2+ G+
I
G
= 20 mA; T2+ G-
I
G
= 20 mA; T2- G+
I
G
= 20 mA; T2- G-
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
1.2
I
T(RMS )
(A)
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aac264
over any 20 ms period
-
-40
-
16
I
T(RMS)
(A)
12
0.8
8
0.4
4
0
-50
0
50
100
150
T
lea d
(°C)
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of lead
temperature; maximum values
f = 50 Hz; T
lead
= 45 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
Z0109NA0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
3 / 13
NXP Semiconductors
Z0109NA0
4Q Triac
2.0
P
tot
(W)
1.6
003aac259
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
α
α = 180°
120
°
90°
60°
30
°
1.2
α
0.8
0.4
0.0
0
0.2
0.4
0.6
0.8
1
I
T(RMS )
(A)
1.2
alpha = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
16
I
TSM
(A)
12
003aaf449
8
I
T
4
1/f
0
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
I
TSM
t
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Z0109NA0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
4 / 13
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