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10A2GTA

Description
Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size299KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

10A2GTA Overview

Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon,

10A2GTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current250 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Reverse test voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
10A05G-10A10G
Technical Data
Data Sheet N2089, Rev. -
10A05G THRU 10A10G
Glass Passivated Rectifiers
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
Plastic material-UL flammability 94V-0
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
R-6
Circuit Diagram
Mechanical Data
Case: R-6 molded plastic
Terminals: Plated axial leads, solderable per MIL-
STD-202, Method 208
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 2.1 grams
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
Type Number
Maximum repetitive peak reverse voltage
Maximum DC blocking voltage
Maximum RMS voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at @T
L
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
2
t Rating for Fusing (t < 8.3ms)
Maximum instantaneous forward voltage at 10.0A
Maximum DC reverse current
At Rated DC Blocking Voltage
@T
A
= 25°C
@T
A
= 125°C
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Symbol
10A05G 10A1G 10A2G 10A4G 10A6G 10A8G 10A10G
Units
V
RRM
V
DC
V
RMS
I
(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
θJA
T
J
, T
STG
50
35
5
100
3
70
1
200
7
140
2
400
1
280
10
250
259
1.1
5
100
150
6
-55 to +150
4
600
2
420
6
800
4
560
8
1000
5
700
1
1
V
V
A
A
A
2
s
V
µA
pF
°C/W
°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction and storage temperature range
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length, P.C.B. mounted.
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