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1N6102US

Description
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size180KB,2 Pages
ManufacturerBkc Semiconductors Inc.
Download Datasheet Parametric View All

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1N6102US Overview

Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon,

1N6102US Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
Reach Compliance Codeunknown
Minimum breakdown voltage6.46 V
Shell connectionISOLATED
Maximum clamping voltage10.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-MELF-R2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWRAP AROUND
Terminal locationEND

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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