MH1M9B1DJA-10 datasheet, PDF - EEWORLD Datasheet

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MH1M9B1DJA-10: DescriptionDRAM Module, 1MX9, 100ns, CMOS, SIMM-30; Categorystorage storage; File Size326KB，11 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH1M9B1DJA-10 Overview

DRAM Module, 1MX9, 100ns, CMOS, SIMM-30

MH1M9B1DJA-10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	SIMM
package instruction	, SIP30,.2
Contacts	30
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	NIBBLE
Maximum access time	100 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XSMA-T30
JESD-609 code	e0
memory density	9437184 bit
Memory IC Type	DRAM MODULE
memory width	9
Number of functions	1
Number of ports	1
Number of terminals	30
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX9
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Encapsulate equivalent code	SIP30,.2
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	12.7 mm
Maximum standby current	0.0045 A
Maximum slew rate	0.54 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MH1M9B1DJA-10 Related Products

	MH1M9B1DJA-10	MH1M9B1DJA-8	MH1M9B1DJA-7
Description	DRAM Module, 1MX9, 100ns, CMOS, SIMM-30	DRAM Module, 1MX9, 80ns, CMOS, SIMM-30	DRAM Module, 1MX9, 70ns, CMOS, SIMM-30
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Mitsubishi	Mitsubishi	Mitsubishi
Parts packaging code	SIMM	SIMM	SIMM
package instruction	, SIP30,.2	, SIP30,.2	, SIP30,.2
Contacts	30	30	30
Reach Compliance Code	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99
access mode	NIBBLE	NIBBLE	NIBBLE
Maximum access time	100 ns	80 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-T30	R-XSMA-T30	R-XSMA-T30
JESD-609 code	e0	e0	e0
memory density	9437184 bit	9437184 bit	9437184 bi
Memory IC Type	DRAM MODULE	DRAM MODULE	DRAM MODULE
memory width	9	9	9
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	30	30	30
word count	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	1MX9	1MX9	1MX9
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Encapsulate equivalent code	SIP30,.2	SIP30,.2	SIP30,.2
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512
Maximum seat height	12.7 mm	12.7 mm	12.7 mm
Maximum standby current	0.0045 A	0.0045 A	0.0045 A
Maximum slew rate	0.54 mA	0.63 mA	0.72 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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