MAC229-4 datasheet, PDF - EEWORLD Datasheet

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MAC229-4: DescriptionTriacs Silicon Bidirectional Triode Thyristors; CategoryAnalog mixed-signal IC Trigger device; File Size116KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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MAC229-4 Overview

Triacs Silicon Bidirectional Triode Thyristors

MAC229-4 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknow
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Trigger device type	TRIAC

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, U

na,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

MAC229

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for industrial and consumer applications for full wave control of

ac loads such as appliance controls, heater controls, motor controls, and other power

switching applications.

• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and

Stability

• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High

Heat Dissipation

• Center Gate Geometry for Uniform Current Spreading

• Gate Triggering Guaranteed in Three Modes (MAC229 Series) or Four Modes

(MAC229A Series)

MAC229A

TRIACs

8 AMPERES RMS

200 thru 800 VOLTS

(TO-220AB)

MAXIMUM RATINGS

(Tj = 25°C unless otherwise noted.)

Rating

Peak Repetitive Off-State VoltageO)

(Tj = -40to 110°C

1/2 Sine ave 50 to 60 Hz, Gate Open)

MAC229-4, MAC229A4

MAC229-6, MAC229A6

MAC229-8, MAC229A8

MAC229-10, MAC229A10

On-State RMS Current (TQ = 80°C)

Full Cycle Sine Wave 50 to 60 Hz

Peak Non-repetitive Surge Current

(One Full Cycle 60 Hz, Tj = 110°C)

Circuit Fusing

(t = 8.3 ms)

Peak Gate Current (t « 2 u.s)

Peak Gate Voltage (t « 2 u,s)

Peak Gate Power (t ^ 2 us)

Average Gate Power

(Tc = 80°C, t S 8.3 ms)

Operating Junction Temperature Range

Storage Temperature Range

Mounting Torque

Symbol

Value

Unit

Volts

VDRM

200

400

600

800

T(RMS)

±2

±10

0.5

-40 to 110

-40 to 150

Amps

Volts

Watts

°C

in. Ib.

(cont.)

ITSM

'GM

PGM

G(AV)

stg

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source

such that the voltage ratings of the devices are exceeded.

Quality Semi-Conductors

MAC229-4 Related Products

	MAC229-4	MAC229A4	MAC229A10	MAC229A8	MAC229A6	MAC229-8	MAC229-10	MAC229-6	MAC229
Description	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors	Triacs Silicon Bidirectional Triode Thyristors
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	-
Reach Compliance Code	unknow	unknow	unknown	unknow	unknow	unknow	unknow	unknow	-
Maximum operating temperature	110 °C	110 °C	110 °C	110 °C	110 °C	110 °C	110 °C	110 °C	-
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-
Trigger device type	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	-

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